Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
Weiße, J.; Hauck, M.; Krieger, M.; Bauer, A.J.; Erlbacher, T.
Journal Article
2019Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
Schlichting, H.; Sledziewski, T.; Bauer, A.J.; Erlbacher, T.
Conference Paper
2019Feasibility of 4H-SiC p-i-n diode for sensitive temperature measurements between 20.5 K and 802 K
Matthus, C.D.; Benedetto, L. di; Kocher, M.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Erlbacher, T.
Journal Article
2019First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept
Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Conference Paper
2019Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
Albrecht, M.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2019Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
Benedetto, L. di; Matthus, C.D.; Erlbacher, T.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Frey, L.
Conference Paper
2019Wavelength-selective 4H-SiC UV-sensor array
Matthus, C.D.; Bauer, A.J.; Frey, L.; Erlbacher, T.
Journal Article
2018Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2018Electrical properties of schottky-diodes based on B doped diamond
Erlbacher, T.; Huerner, A.; Zhu, Y.; Bach, L.; Schletz, A.; Zürbig, Verena; Pinti, Lucas; Kirste, Lutz; Giese, Christian; Nebel, Christoph E.; Bauer, A.J.; Frey, L.
Conference Paper
2018Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J.
Conference Paper
2017Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 degrees C
Matthus, C.D.; Erlbacher, T.; Hess, A.; Bauer, A.J.; Frey, L.
Journal Article
2017Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET
Albrecht, M.; Hürner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2017Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
Matthus, C.D.; Erlbacher, T.; Schöfer, B.; Bauer, A.J.; Frey, L.
Conference Paper
2017Monolithically integrated solid-state-circuit-breaker for high power applications
Huerner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2017Novel advanced analytical design tool for 4H-SiC VDMOSFET devices
Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Conference Paper
2017Stress reduction in high voltage MIS capacitor fabrication
Banzhaf, S.; Kenntner, J.; Grieb, M.; Schwaiger, S.; Erlbacher, T.; Bauer, A.J.; Frey, L.; Frey, L.
Conference Paper
2016Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes
Di Benedetto, L.; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Bellone, S.
Journal Article
2016Monolithic 3D TSV-based high-voltage, high-temperature capacitors
Gruenler, S.; Rattmann, G.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Journal Article, Conference Paper
2015Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices
Beltran, A.M.; Duguay, S.; Strenger, C.; Bauer, A.J.; Cristiano, F.; Schamm-Chardon, S.
Journal Article
2015Impact of post-trench processing on the electrical characteristics of 4H-SiC trench-MOS structures with thick top and bottom oxides
Banzhaf, C.T.; Grieb, M.; Rambach, M.; Bauer, A.J.; Frey, L.
Conference Paper
2015Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time
Paskaleva, A.; Weinreich, W.; Bauer, A.J.; Lemberger, M.; Frey, L.
Journal Article
2015Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors
Erlbacher, T.; Schwarzmann, H.; Bauer, A.J.; Döhler, G.H.; Schreivogel, M.; Lutz, T.; Guillén, F.H.; Graf, J.; Fix, R.; Frey, L.
Journal Article
2015Modelling of the electrochemical etch stop with high reverse bias across pn-junctions
Szwarc, R.; Frey, L.; Weber, H.; Moder, I.; Erlbacher, T.; Rommel, M.; Bauer, A.J.
Conference Paper
2015Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC
Hürner, A.; Benedetto, L. di; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.
Conference Paper
2015Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications
Krach, F.; Schwarzmann, H.; Bauer, A.J.; Erlbacher, T.; Frey, L.
Journal Article
2015Temperature dependent characterization of bipolar injection field-effect-transistors (BiFET) for determining the short-circuit-capability
Hürner, A.; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.
Conference Paper
2014Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors
Noll, S.; Rambach, M.; Grieb, M.; Scholten, D.; Bauer, A.J.; Frey, L.
Conference Paper
2014Experimental analysis of bipolar SiC-devices for future energy distribution systems
Huerner, A.; Mitlehner, H.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2014Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs
Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter
Conference Paper
2014High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors
Oertel, S.; Jank, M.P.M.; Teuber, E.; Bauer, A.J.; Frey, L.
Conference Paper, Journal Article
2014Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures
Banzhaf, C.T.; Grieb, M.; Trautmann, A.; Bauer, A.J.; Frey, L.
Conference Paper
2014Investigation of trenched and high temperature annealed 4H-SiC
Banzhaf, C.T.; Grieb, M.; Trautmann, A.; Bauer, A.J.; Frey, L.
Conference Paper
2014Large area fabrication of plasmonic color filters using UV-SCIL
Rumler, Maximilian; Fader, R.; Förthner, M.; Haas, A.; Rommel, M.; Bauer, A.J.; Frey, L.
Presentation
2014NanoSPV - SPM Technique for Measuring Minority Charge Carrier Diffusion Lengths with High Spatial Resolution
Stumpf, Florian; Rommel, M.; Bauer, A.J.; Frey, L.; Hitzel, F.; Stadelmann, A.
Presentation
2014Reliability of monolithic RC-snubbers in MOS-based power modules
Erlbacher, T.; Schwarzmann, H.; Krach, F.; Bauer, A.J.; Berberich, S.E.; Kasko, I.; Frey, L.
Conference Paper
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Conference Paper
2014Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
Hürner, A.; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2013Accuracy of wafer level alignment with substrate conformal imprint lithography
Fader, Robert; Rumler, M.; Rommel, M.; Bauer, A.J.; Frey, L.; Verschuuren, M.A.; Laar, R. van de; Ji, R.; Schömbs, U.
Presentation
2013Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation
Hürner, A.; Schlegl, T.; Adelmann, B.; Mitlehner, H.; Hellmann, R.; Bauer, A.J.; Frey, L.
Conference Paper
2013Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
Iglesias, V.; Martin-Martinez, J.; Porti, M.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Erlbacher, T.; Rommel, M.; Murakami, K.; Bauer, A.J.; Frey, L.; Bersuker, G.
Journal Article
2013Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures
Banzhaf, C.T.; Grieb, M.; Trautmann, A.; Bauer, A.J.; Frey, L.
Conference Paper
2013Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC
Häublein, V.; Temmel, G.; Mitlehner, H.; Rattmann, G.; Strenger, C.; Hürner, A.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2013Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.
Conference Paper
2013Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
Weinreich, W.; Shariq, A.; Seidel, K.; Sundqvist, J.; Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Journal Article, Conference Paper
2013Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi
Noll, S.; Scholten, D.; Grieb, M.; Bauer, A.J.; Frey, L.
Conference Paper
2013Functional epoxy polymer for direct nano-imprinting of micro-optical elements
Fader, R.; Landwehr, J.; Rumler, M.; Rommel, M.; Bauer, A.J.; Frey, L.; Völkel, R.; Brehm, M.; Kraft, A.
Journal Article
2013Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.
Conference Paper
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Conference Paper
2013Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts
Adelmann, B.; Hürner, A.; Schlegel, T.; Bauer, A.J.; Frey, L.; Hellmann, R.
Journal Article
2013Life time of flexible PDMS stamps for UV-enhanced substrate conformal imprint lithography (SCIL)
Fader, Robert; Rumler, M.; Rommel, M.; Bauer, A.J.; Frey, L.; Brehm, M.; Kraft, A.; Reboud, V.; Landis, S.
Presentation
2013On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs
Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.
Conference Paper
2013Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
Rommel, M.; Rumler, M.; Haas, A.; Bauer, A.J.; Frey, L.
Journal Article
2013Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
Weinreich, W.; Wilde, L.; Müller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A.J.
Journal Article
20124H-SiC MOSFETs with a stable protective coating for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2012Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs
Strenger, C.; Häublein, V.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Bedel-Pereira, E.; Lefebvre, M.; Cristiano, F.
Conference Paper
2012Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks
Iglesias, V.; Erlbacher, T.; Rommel, M.; Murakami, K.; Bauer, A.J.; Frey, L.; Porti, M.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Bersuker, G.
Poster
2012Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
Erlbacher, T.; Huerner, A.; Bauer, A.J.; Frey, L.
Journal Article
2012Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography
Schmitt, H.; Duempelmann, P.; Fader, R.; Rommel, M.; Bauer, A.J.; Frey, L.; Brehm, M.; Kraft, A.
Journal Article, Conference Paper
2012Nano-analytical and electrical characterization of 4H-SiC MOSFETs
Beltran, A.M.; Schamm-Chardon, S.; Mortet, V.; Lefebvre, M.; Bedel-Pereira, E.; Cristiano, F.; Strenger, C.; Häublein, V.; Bauer, A.J.
Conference Paper
2012Novel organic polymer for UV-enhanced substrate conformal imprint lithography
Fader, R.; Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.; Ji, R.; Hornung, M.; Brehm, M.; Vogler, M.
Journal Article, Conference Paper
2012Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures
Rommel, M.; Bauer, A.J.; Frey, L.
Journal Article, Conference Paper
2012Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications
Daves, W.; Kraus, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Journal Article
20114H-SiC n-MOSFET logic circuits for high temperature operation
Le-Huu, M.; Grieb, M.; Schrey, F.F.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2011Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy
Yanev, V.; Rommel, M.; Bauer, A.J.; Frey, L.
Journal Article, Conference Paper
2011Comparative study on metallization and passivation materials for high temperature sensor applications
Daves, W.; Krauss, A.; Le-Huu, M.; Kronmüller, S.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2011Current voltage characteristics through grains and grain boundaries of high-k dielectric thin films measured by tunneling atomic force microscopy
Murakami, K.; Rommel, M.; Yanev, V.; Bauer, A.J.; Frey, L.
Poster
2011Dielectric layers suitable for high voltage integrated trench capacitors
Dorp, J. vom; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article, Conference Paper
2011Effect of increased oxide hole trap density due to nitrogen incorporation at the SiO2/SiC interface on F-N current degradation
Strenger, C.; Bauer, A.J.; Ryssel, H.
Conference Paper
2011Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2011Enhancement of the stability of Ti and Ni ohmic contacts to 4H-SiC with a stable protective coating for harsh environment applications
Daves, W.; Krauss, A.; Häublein, V.; Bauer, A.J.; Frey, L.
Journal Article
2011Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.
Journal Article, Conference Paper
2011Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article, Conference Paper
2011Gate oxide reliability at the nano-scale evaluated by combining cAFM and CVS
Erlbacher, T.; Yanev, V.; Rommel, M.; Bauer, A.J.; Frey, L.
Journal Article, Conference Paper
2011Germanium substrate loss during thermal processing
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2011A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
Murakami, M.; Rommel, M.; Yanev, V.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Journal Article
2011Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures
Paskaleva, A.; Lemberger, M.; Bauer, A.J.; Frey, L.
Journal Article
2011Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC
Schmitt, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Conference Paper
2011Investigation of the reliability of 4H-SiC MOS devices for high temperature applications
Le-Huu, M.; Schmitt, H.; Noll, S.; Grieb, M.; Schrey, F.F.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2011Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography
Schmitt, H.; Duempelmann, P.; Fader, R.; Rommel, M.; Bauer, A.J.; Frey, L.; Brehm, M.; Kraft, A.
Poster
2011Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy
Jambreck, J.D.; Böhmler, M.; Rommel, M.; Hartschuh, A.; Bauer, A.J.; Frey, L.
Conference Paper
2011Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy
Jambreck, J.D.; Yanev, V.; Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.
Journal Article, Conference Paper
2011Novel polymers for UV-enhanced substrate conformal imprint lithography
Fader, R.; Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.; Ji, R.; Hornung, M.; Brehm, M.; Vogler, M.
Poster
2011A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions
Lorentz, V.R.H.; Schwarzmann, H.; März, M.; Bauer, A.J.; Ryssel, H.; Frey, L.; Poure, P.; Braun, F.
Journal Article
2011Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.
Journal Article
2011Simple and efficient method to fabricate nano-cone arrays by FIB milling demonstrated on planar substrates and on protruded structures
Rommel, M.; Bauer, A.J.; Frey, L.
Poster
2011Traps and trapping phenomena and their implications on electrical behavior of high-k capacitor stacks
Paskaleva, A.; Lemberger, M.; Atanassova, E.; Bauer, A.J.
Journal Article, Conference Paper
2011UV-enhanced substrate conformal imprint lithography using an epoxy based polymer
Fader, R.; Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.; Ji, R.; Hornung, M.; Brehm, M.; Kraft, A.
Poster
2010Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
Hinz, J.; Bauer, A.J.; Frey, L.
Journal Article
2010Characterization of thickness variations of thin dielectric layers at a nanoscale using Scanning Capacitance Microscopy
Yanev, V.; Rommel, M.; Bauer, A.J.; Frey, L.
Poster
2010Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Conference Paper
2010Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques
Rommel, M.; Spoldi, G.; Yanev, V.; Beuer, S.; Amon, B.; Jambreck, J.; Petersen, S.; Bauer, A.J.; Frey, L.
Journal Article
2010Detection and electrical characterization of defects at the SiO2/4H-SiC interface
Krieger, M.; Beljakow, S.; Zippelius, B.; Afanas´ev, V.V.; Bauer, A.J.; Nanen, Y.; Kimoto, T.; Pensl, G.
Conference Paper
2010Direct imprinting, post processing, and characterization of functional UV-curing materials
Schmitt, H.; Kett, F.; Fader, R.; Rommel, M.; Bauer, A.J.; Hornung, M.; Frey, L.
Poster
2010Effective work function tuning in high-kappa dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article
2010Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Book Article
2010Electrical characterization and reliability of nitrided-gate insulators for N- and P-type 4H-SiC MIS devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.
Conference Paper
2010Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers
Rommel, M.; Yanev, V.; Paskaleva, A.; Erlbacher, T.; Lemberger, M.; Bauer, A.J.; Frey, L.
Conference Paper
2010Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
Hinz, J.; Bauer, A.J.; Thiede, T.; Fischer, R.A.; Frey, L.
Journal Article
2010Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing
Jambreck, J.D.; Schmitt, H.; Amon, B.; Rommel, M.; Bauer, A.J.; Frey, L.
Journal Article, Conference Paper
2010Full wafer microlens replication by UV imprint lithography
Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.; Bich, A.; Eisner, M.; Völkel, R.; Hornung, M.
Conference Paper, Journal Article
2010Honeycomb voids due to ion implantation in germanium
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2010Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminum implanted 4H SiC
Schmitt, H.; Häublein, V.; Bauer, A.J.; Frey, L.
Poster
2010Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations
Rommel, M.; Jambreck, J.D.; Ebm, C.; Platzgummer, E.; Bauer, A.J.; Frey, L.
Journal Article, Conference Paper
2010Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil
Dorp, J. vom; Erlbacher, T.; Lorentz, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2010Lanthanoid implantation for effective work function control in NMOS high-k/metal gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2010Lossless average inductor current sensor for CMOS integrated DC-DC converters operating at high frequencies
Lorentz, V.R.H.; Berberich, S.E.; März, M.; Bauer, A.J.; Ryssel, H.; Poure, P.; Braun, F.
Journal Article
2010Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy
Jambreck, J.D.; Yanev, V.; Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.
Poster
2010Modeling of the effective work function instability in metal/high-kappa dielectric stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Journal Article
2010Nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy: Manufacturing, characterization, and application
Jambreck, J.D.; Yanev, V.; Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.
Poster
2010NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications
Le-Huu, M.; Schrey, F.F.; Grieb, M.; Schmitt, H.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper
2010Reduced on resistance in LDMOS devices by integrating trench gates into planar technology
Erlbacher, T.; Bauer, A.J.; Frey, L.
Journal Article
2010Silicon carbide and related materials 2009
: Bauer, A.J.; Friedrichs, P.; Krieger, M.; Pensl, G.; Rupp, R.; Seyller, T.
Conference Proceedings
2010Trench gate integration into planar technology for reduced on-resistance in LDMOS devices
Erlbacher, T.; Rattmann, G.; Bauer, A.J.; Frey, L.
Poster
2010Trench gate integration into planar technology for reduced on-resistance in LDMOS devices
Erlbacher, T.; Rattmann, G.; Bauer, A.J.; Frey, L.
Conference Paper
2009Analysis of the DC-arc behavior of a novel 3D-active fuse
Dorp, J. vom; Berberich, S.E.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
Yanev, V.; Erlbacher, T.; Rommel, M.; Bauer, A.J.; Frey, L.
Journal Article
2009Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
Yanev, V.; Erlbacher, T.; Rommel, M.; Bauer, A.J.; Frey, L.
Poster
2009Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy
Weinreich, W.; Wilde, L.; Kücher, P.; Lemberger, M.; Yanev, V.; Rommel, M.; Bauer, A.J.; Erben, E.; Heitmann, J.; Schröder, U.; Oberbeck, L.
Conference Paper, Journal Article
2009Deposition of niobium nitride thin films from Tert-Butylamido-Tris-(Diethylamido)-Niobium by a modified industrial MOCVD reactor
Thiede, T.B.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Barreca, D.; Gasparotto, A.; Fischer, R.A.
Journal Article
2009Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Electrical characterization of MOS structures with deposited oxides annealed in N2O or NO
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Conference Paper
2009Experimental observation of FIB induced lateral damage on silicon samples
Spoldi, G.; Beuer, S.; Rommel, M.; Yanev, V.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing
Jambreck, J.D.; Schmitt, H.; Amon, B.; Rommel, M.; Bauer, A.J.; Frey, L.
Poster
2009Full wafer microlens replication by UV imprint lithography
Schmitt, H.; Rommel, M.; Bauer, A.J.; Frey, L.; Bich, A.; Eisner, M.; Voelkel, R.; Hornung, M.
Poster
2009Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Weinreich, W.; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, J.; Wilde, L.; Teichert, S.; Heitmann, J.; Erben, E.; Oberbeck, L.; Schröder, U.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers
Weinreich, W.; Ignatova, V.A.; Wilde, L.; Teichert, S.; Lemberger, M.; Bauer, A.J.; Reiche, R.; Erben, E.; Heitmann, J.; Oberbeck, L.; Schröder, U.
Journal Article
2009Influence of the amorphous/crystalline phase of Zr1-xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks
Pakaleva, A.; Lemberger, M.; Bauer, A.J.; Weinreich, W.; Heitmann, J.; Erben, E.; Schröder, U.; Oberbeck, L.
Journal Article
2009Influence of the oxidation temperature and atmosphere on the reliability of thick gate oxides on the 4H-SiC C(000-1) face
Grieb, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Ryssel, H.
Conference Paper
2009Lanthanum implantation for threshold voltage control in metal/high-k devices
Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.
Conference Paper, Journal Article
2009Properties of TaN thin films produced using PVD linear dynamic deposition technique
Kozlowska, M.; Oechsner, R.; Pfeffer, M.; Bauer, A.J.; Meissner, E.; Pfitzner, L.; Ryssel, H.; Maass, W.; Langer, J.; Ocker, B.; Schmidbauer, S.; Gonchond, J.-P.
Journal Article, Conference Paper
2009Search for future high-k dielectrics, boundary conditions and examples
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W.
Conference Paper
2009Silicon based trench hole power capacitor
Berberich, S.E.; Dorp, J. vom; Bauer, A.J.; Ryssel, H.
Journal Article
2009Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers
Erlbacher, T.; Graf, T.; DasGupta, N.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2009UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Beuer, S.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008Custom-specific UV nanoimprint templates and life-time of antisticking layers
Schmitt, H.; Zeidler, M.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008DC-arc behavior of a novel active fuse
Dorp, J. vom; Berberich, S.E.; Bauer, A.J.; Ryssel, H.
Conference Paper
2008Detailed carrier lifetime analysis of iron-contaminated boron-doped silicon by comparison of simulation and measurement
Rommel, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2008Electrical AFM techniques for the advanced characterization of materials in semiconductor technology
Yanev, V.; Rommel, M.; Spoldi, G.; Beuer, S.; Amon, B.; Petersen, S.; Lugstein, A.; Steiger, A.; Bauer, A.J.; Ryssel, H.
Poster
2008Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2008Evaluation of MOCVD grown niobium nitride films as gate electrode for advanced CMOS technology
Thiede, T.; Parala, H.; Reuter, K.; Passing, G.; Kirchmeyer, S.; Hinz, J.; Lemberger, M.; Bauer, A.J.; Fischer, R.A.
Conference Paper
2008Experimental observation of FIB induced lateral damage on silicon samples
Spoldi, G.; Beuer, S.; Rommel, M.; Yanev, V.; Bauer, A.J.; Ryssel, H.
Poster
2008HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories
Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2008High-k: Latest developments and perspectives
Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W.
Book Article
2008Hightech-Materialien für die Elektronik von morgen
Jank, M.P.; Bauer, A.J.; Fischer, B.; Slama, A.; Potinecke, T.
Book Article
2008Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy
Paskaleva, A.; Yanev, V.; Rommel, M.; Lemberger, M.; Bauer, A.J.
Journal Article
2008Recent improvements in the integration of field emitters into scanning probe microscopy sensors
Beuer, S.; Rommel, M.; Petersen, S.; Amon, B.; Sulzbach, T.; Engl, W.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008SSRM characterisation of FIB induced damage in silicon
Beuer, S.; Yanev, V.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
Yanev, V.; Rommel, M.; Lemberger, M.; Petersen, S.; Amon, B.; Erlbacher, T.; Bauer, A.J.; Ryssel, H.; Paskalev, A.; Weinreich, W.; Fachmann, C.; Heitmann, J.; Schroeder, U.
Journal Article
2008UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2007Accurate parameter extraction for the simulation of direct structuring by ion beams
Beuer, S.; Rommel, M.; Lehrer, C.; Platzgummer, E.; Kvasnica, S.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2007Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors
Lemberger, M.; Baunemann, A.; Bauer, A.J.
Journal Article
2007Custom-specific UV nanoimprint templates and life-time of antisticking layers
Schmitt, H.; Zeidler, M.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2007Detailed photocurrent analysis of iron contaminated boron doped silicon by comparison of simulation and measurement
Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper
2007Electrical characterization of low dose focused ion beam induced damage in silicon by scanning spreading resistance microscopy
Beuer, S.; Yanev, V.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2007Hafnium silicate as control oxide in non-volatile memories
Erlbacher, T.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2007High temperature implantation of aluminum in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Conference Paper
2007High voltage 3D-capacitor
Berberich, S.E.; Bauer, A.J.; Ryssel, H.
Conference Paper
2007MOCVD of hafnium silicate films obtained from a single-source precursor on silicon and germanium for gate-dielectric applications
Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Frey, L.; Ryssel, H.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.
Journal Article
2007MOCVD of TaN Using the All-Nitrogen-Coordinated Precursors [Ta(NEtMe)3(N-tBu)], [Ta(NEtMe)(N-tBu){C(N-iPr)2(NEtMe)}2] and [Ta(NMeEt)2(N-tBu){Me2N-N(SiMe3)}]
Baunemann, A.; Lemberger, M.; Bauer, A.J.; Parala, H.; Fischer, R.A.
Journal Article
2007MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications
Lemberger, M.; Thiemann, S.; Baunemann, A.; Parala, H.; Fischer, R.A.; Hinz, J.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2007Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers
Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Journal Article
2007Quantitative oxide charge determination by photocurrent analysis
Rommel, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2007Recent improvements in the integration of field emitters into scanning probe microscopy sensors
Beuer, S.; Rommel, M.; Petersen, S.; Amon, B.; Sulzbach, T.; Engl, W.; Bauer, A.J.; Ryssel, H.
Poster
2007Stress induced leakage current mechanism in thin Hf-silicate layers
Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Journal Article
2007Thermal stability of thin ALD ZrO2 layers as dielectrics in deep trench DRAM devices annealed in N2 and NH3
Weinreich, W.; Lemberger, M.; Erben, E.; Heitmann, J.; Wilde, L.; Ignatova, V.A.; Teichert, S.; Schröder, U.; Oberbeck, L.; Bauer, A.J.; Ryssel, H.; Kücher, P.
Poster
2007Verification of grain boundaries in annealed thin ZrO2 films by electrical AFM technique
Yanev, V.; Paskaleva, A.; Weinreich, W.; Lemberger, M.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2006Accurate parameter extraction for the simulation of direct structuring by ion beams
Beuer, S.; Rommel, M.; Lehrer, C.; Platzgummer, E.; Kvasnica, S.; Bauer, A.J.; Ryssel, H.
Poster
2006Active Fuse
Berberich, S.E.; März, M.; Bauer, A.J.; Beuer, S.; Ryssel, H.
Conference Paper
2006Correlation between defects, leakage currents and conduction mechanisms in thin high-k dielectric layers
Paskaleva, A.; Atanassova, E.; Lemberger, M.; Bauer, A.J.
Conference Paper
2006Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements
Rambach, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2006High temperature implantation of aluminum in 4H silicon carbide
Rambach, M.; Bauer, A.J.; Ryssel, H.
Conference Paper
2006Stress induced leakage currents and charge trapping in thin Zr- and Hf-silicate layers
Paskaleva, A.; Lemberger, M.; Bauer, A.J.
Conference Paper
2005Annealing of aluminum implanted 4H-SiC
Rambach, M.; Bauer, A.J.; Frey, L.; Friedrichs, P.; Ryssel, H.
Conference Paper
2005An asymmetry of conduction mechanisms and charge trapping in thin high-k Hf(x)Ti(y)Si(z)O films
Paskaleva, A.; Bauer, A.J.; Lemberger, M.
Journal Article
2005Characterization of interface state densities by photocurrent analysis. Comparison of results for different insulator layers
Rommel, M.; Groß, M.; Ettinger, A.; Bauer, A.J.; Frey, L.; Ryssel, H.
Poster
2005Characterization of interface state densities by photocurrent analysis: Comparison of results for different insulator layers
Rommel, M.; Groß, M.; Ettinger, A.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2005Chemistry of mixed ligand all nitrogen coordinated Ta, Hf, and W precursors for metal nitride MOCVD
Baunemann, A.; Rische, D.; Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Fischer, R.A.
Poster
2005Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article, Conference Paper
2005High-k hafnium silicate films on silicon and germanium wafers by MOCVD using a single-source precursor
Lemberger, M.; Schön, F.; Dirnecker, T.; Jank, M.P.M.; Paskaleva, A.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper
2005Implantation and annealing of aluminum in 4H silicon carbide
Rambach, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2005MOCVD of conductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine
Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Baunemann, A.; Fischer, R.A.
Conference Paper
2005MOCVD of cunductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine
Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Baunemann, A.; Fischer, R.A.
Conference Paper
2005Thin Hf(x)Ti(y)Si(z)O films with varying Hf to Ti contents as candidates for high-k dielectrics
Bauer, A.J.; Paskaleva, A.; Lemberger, M.; Frey, L.; Ryssel, H.
Conference Paper
2005Triple trench gate IGBTs
Berberich, S.E.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper
2005Wafer scale characterization of interface state densities without test structures by photocurrent analysis
Rommel, M.; Groß, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2004Different current conduction mechanisms through thin high-k Hf(x)Ti(y)Si(z)O films due to the varying Hf to Ti ratio
Paskaleva, A.; Bauer, A.J.; Lemberger, M.; Zurcher, S.
Journal Article
2004Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zurcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2004Electrical properties and conduction mechanisms in Hf(x)Ti(y)Si(z)O films obtained from novel MOCVD precursors
Paskaleva, A.; Lemberger, M.; Zürcher, S.; Bauer, A.J.
Conference Paper
2004Investigation of rapid thermal annealed pn-junctions in SiC
Rambach, M.; Weiss, R.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2003Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2003Hafnium titanium silicate high-k dielectric films deposited by MOCVD using novel single source precursors
Zürcher, S.; Morstein, M.; Lemberger, M.; Bauer, A.J.
Conference Paper
2003Influence of antenna shape and resist patterns on charging damage during ion implantation
Dirnecker, T.; Bauer, A.J.; Beyer, A.; Frey, L.; Henke, D.; Ruf, A.; Ryssel, H.
Conference Paper
2003Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents
Jank, M.; Frey, L.; Bauer, A.J.; Ryssel, H.
Conference Paper
2003Surface properties and electrical characteristics of rapid thermal annealed 4H-SiC
Bauer, A.J.; Rambach, M.; Frey, L.; Weiss, R.; Rupp, R.; Friedrichs, P.; Schörner, R.; Peters, D.
Conference Paper
2003Trench sidewall doping for lateral power devices
Berberich, S.E.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper
2003Zirconium silicate films obtained from novel MOCVD precursors
Lemberger, M.; Paskaleva, A.; Zürcher, S.; Bauer, A.J.; Frey, L.; Ryssel, H.
Conference Paper, Journal Article
2002Influence of photoresist pattern on charging damage during high current ion implantation
Dirnecker, T.; Ruf, A.; Frey, L.; Beyer, A.; Bauer, A.J.; Henke, D.; Ryssel, H.
Conference Paper
2002MOCVD of titanium dioxide on the basis of new precursors
Leistner, T.; Lehmbacher, K.; Härter, P.; Schmidt, C.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2001Electrical reliability aspects of through the gate implanted MOS-structures with thin oxides
Jank, M.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2001New precursors for MOCVD of high-k metal silicates as alternative to SiO2 in semiconducting devices
Zürcher, S.; Morstein, M.; Bauer, A.J.; Lemberger, M.
Poster
2001Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low-pressure in different gas atmospheres
Beichele, M.; Bauer, A.J.; Herden, M.; Ryssel, H.
Journal Article
2001Reliability of ultrathin nitrided oxides grown in low- pressure N2O ambient
Beichele, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2001Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode
Herden, M.; Bauer, A.J.; Beichele, M.; Ryssel, H.
Journal Article
2001Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices
Strobel, S.; Bauer, A.J.; Beichele, M.; Ryssel, H.
Journal Article
2000Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure and in different gas atmospheres
Beichele, M.; Bauer, A.J.; Ryssel, H.
Journal Article
2000Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices
Herden, M.; Bauer, A.J.; Ryssel, H.
Journal Article
1999Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone
Bauer, A.J.; Froeschle, B.; Beichele, M.; Ryssel, H.
Conference Paper
1999Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO
Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H.
Conference Paper
1999Impact of nitrogen implantation into polysilicon to reduce boron penetration through the gate oxide
Bauer, A.J.; Mayer, P.; Frey, L.; Häublein, V.; Ryssel, H.
Conference Paper
1999Reliability of ultra-thin gate oxides grown in low-pressure N20 ambient or on nitrogen-implanted silicon
Bauer, A.J.; Beichele; Herden, M.; Ryssel, H.
Conference Paper
19984 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1998Schnelle thermische Niederdruckoxidation
Bauer, A.J.
Conference Paper
1997Characterization of oxide etching and wafer cleaning using vapor-phase anhydrous HF and ozone
Froeschle, B.; Deutschmann, L.; Bauer, A.J.; Burte, E.P.
Conference Paper
1997Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1997Cleaning process optimization in a gate oxide cluster tool using an in-line XPS module
Froeschle, B.; Glowacki, F.; Bauer, A.J.; Kasko, I.; Öchsner, R.; Schneider, C.
Conference Paper
1997Integrated vapor-phase cleaning and pure NO nitridation for gate stack formation
Glowacki, F.; Froeschle, B.; Deutschmann, L.; Sagnes, I.; Laviale, D.; Bensahel, D.; Galimaoui, A.; Martin, F.; Bauer, A.J.
Conference Paper
1996Characterization of ultrathin on stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Journal Article
1996High quality 4 nm gate dielectrics prepared at low pressure in oxygen oxide atmospheres
Bauer, A.J.; Burte, E.P.
Conference Paper
19954 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
Bauer, A.J.; Burte, E.P.; Ryssel, H.
Conference Paper
1995Schnelle thermische Prozessierung und Charakterisierung dünner nitridierter Oxide
Bauer, A.J.
Dissertation
1995Structural and electrical properties of thin SiO2 layers grown by RTP in a mixture of N2O and O2
Bauer, A.J.; Burte, E.P.
Journal Article