Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Process variability - technological challenge and design issue for nanoscale devices
Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping
Journal Article
2018Autonomous circuit design of a resonant converter (LLC) for on-board chargers using genetic algorithms
Rosskopf, A.; Volmering, S.; Ditze, S.; Joffe, C.; Bär, E.
Conference Paper
2018The effect of etching and deposition processes on the width of spacers created during self-aligned double patterning
Baer, Eberhard; Lorenz, Juergen
Conference Paper
2018Elektronik
Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin
Book Article
2018Modeling of block copolymer dry etching for directed self-assembly lithography
Belete, Zelalem; Bär, Eberhard; Erdmann, Andreas
Conference Paper
2018Optimized 2D positioning of windings in inductive components by genetic algorithm
Rosskopf, Andreas; Knoerzer, Karsten; Baer, Eberhard; Ehrlich, Stefan
Conference Paper
2018Process variability for devices at and beyond the 7 nm node
Lorenz, Jürgen; Asenov, Asen; Bär, Eberhard; Barraud, Sylvain; Millar, Campbell; Nedjalkov, Mihail
Conference Paper
2018Process variability for devices at and beyond the 7 nm node
Lorenz, Juergen; Asenov, Asen; Baer, Eberhard; Barraud, Sylvain; Kluepfel, Fabian; Millar, Campbell; Nedjalkov, Mihail
Journal Article
2016Calculation of power losses in litz wire systems by coupling FEM and PEEC method
Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher; Bonse, Clemens
Journal Article
2016Enhancement of the partial discharge inception voltage of DBCs by adjusting the permittivity of the encapsulation
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Schneider, Richard; Bär, Eberhard; Schletz, Andreas
Conference Paper
2016Enhancing partial discharge inception voltage of DBCs by geometrical variations based on simulations of the electric field strength
Bayer, Christoph Friedrich; Waltrich, Uwe; Schneider, Richard; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas
Conference Paper
2016Equipment simulation for studying the growth rate and its uniformity of oxide layers deposited by plasma-enhanced oxidation
Baer, Eberhard; Niess, Juergen
Conference Paper
2016Influence of varying bundle structures on power electronic systems simulated by a coupled approach of FEM and PEEC
Rosskopf, A.; Schuster, S.; Endruschat, A.; Bär, E.
Conference Paper
2016Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas
Conference Paper
2016Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas
Journal Article
2016Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations
Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen
Conference Paper
2016Simulation of process variations in FinFET transistor patterning
Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen
Conference Paper
2016Stacking of insulating substrates and a field plate to increase the PDIV for high voltage power modules
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas
Conference Paper
2016Verfahren zum Herstellen eines Metall-Keramik-Substrates und zugehöriges Metall-Keramik-Substrat
Bayer, Christoph; Waltrich, Uwe; Schletz, Andreas; Bär, Eberhard; Meyer, Andreas
Patent
2015Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried
Journal Article, Conference Paper
2015Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method
Montoliu, C.; Baer, Eberhard; Cerda, J.; Colom, R.J.
Journal Article
2015Simulation of the electric field strength in the vicinity of metallization edges on dielectric substrates
Bayer, Christoph; Bär, Eberhard; Waltrich, Uwe; Malipaard, Dirk; Schletz, Andreas
Journal Article
2015Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA
Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick
Conference Paper
2014Calculation of ohmic losses in litz wires by coupling analytical and numerical methods
Roßkopf, Andreas; Joffe, Christopher; Bär, Eberhard
Conference Paper
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Journal Article
2014Influence of inner skin- and proximity effects on conduction in litz wires
Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher
Journal Article
2014Simultaneous simulation of systematic and stochastic process variations
Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David
Conference Paper
2014Thermal properties of interconnects in power MOSFETs
Burenkov, Alex; Bär, Eberhard; Boianceanu, Cristian
Conference Paper
2014Three-dimensional simulation for the reliability and electrical performance of through-silicon vias
Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried
Conference Paper
2014Variability-aware compact model strategy for 20-nm bulk MOSFETs
Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen
Conference Paper
2012Correlation-aware analysis of the impact of process variations on circuit behavior
Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian
Conference Paper
2012Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Journal Article
2011Hierarchical simulation of process variations and their impact on circuits and systems: Methodology
Lorenz, J.; Bär, E.; Clees, T.; Jancke, R.; Salzig, C.P.J; Selberherr, S.
Journal Article
2011Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Journal Article
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Conference Paper
2011Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen
Poster
2010Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines
Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J.
Conference Paper
2010Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric
Baer, E.; Kunder, D.; Lorenz, J.; Sekowski, M.; Paschen, Uwe
Conference Paper
2010Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.
Conference Paper
2010Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.
Conference Paper
2010Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator
Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M.
Journal Article, Conference Paper
2008Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.
Journal Article
2008Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon
Kunder, D.; Baer, E.
Journal Article
2006A fast development simulation algorithm for discrete resist models
Schnattinger, T.; Bär, E.; Erdmann, A.
Conference Paper, Journal Article, Conference Paper
2006Mesoscopic resist processing simulation in optical lithography
Schnattinger, T.; Bär, E.; Erdmann, A.
Conference Paper
2006Three-dimensional resist development simulation with discrete models
Schnattinger, T.; Baer, E.; Erdmann, A.
Journal Article
2005Comparison of different approaches for the simulation of topography evolution during lithography development
Schnattinger, T.; Bär, E.
Conference Paper
20043D feature-scale simulation of sputter etching with coupling to equipment simulation
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
2004Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation
Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper, Journal Article
2004Polierverfahren in der Halbleiterfertigung
Pfitzner, L.; Bär, E.; Frickinger, J.; Nguyen, H.; Nutsch, A.
Conference Paper
2004Three-dimensional simulation of ionized metal plasma vapor deposition
Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper, Journal Article
2003Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
2003Three-dimensional triangle-based simulation of etching processes and applications
Lenhart, O.; Bär, E.
Journal Article
2002Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers
Bär, E.; Lorenz, J.; Ryssel, H.
Journal Article
2002Three-dimensional triangle-based simulation of etching processes
Lenhart, O.; Bär, E.
Conference Paper
20003D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Conference Paper
2000Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J.
Journal Article
2000Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Journal Article
2000Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Journal Article