Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2008Growth of thick films CdTe from the vapor phase
Sorgenfrei, R.; Greiffenberg, D.; Bachem, K.H.; Kirste, L.; Zwerger, A.; Fiederle, M.
Journal Article
1999Band gaps and band offsets in strained GaAs(1-y)Sb(y) on InP grown by metalorganic chemical vapor deposition
Peter, M.; Herres, N.; Fuchs, F.; Winkler, K.; Bachem, K.H.; Wagner, J.
Journal Article
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Conference Paper
1999Group III-nitride based blue emitters
Obloh, H.; Bachem, K.H.; Behr, D.; Kaufmann, U.; Kunzer, M.; Ramakrishnan, A.; Schlotter, P.; Seelmann-Eggebert, M.; Wagner, J.
Book Article
1999Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
Peter, M.; Kiefer, R.; Fuchs, F.; Herres, N.; Winkler, K.; Bachem, K.H.; Wagner, J.
Journal Article
1999Modulationsdotierter Feldeffekttrasistor mit kompositionsmodulierter Barrierenstruktur
Bachem, K.H.; Eastman, L.F.
Patent
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Conference Paper
1999X-ray analysis of the texture of heteroepitaxial gallium nitride films
Herres, N.; Obloh, H.; Bachem, K.H.; Helmig, K.
Journal Article
1998Advantages of Al-free GaInP/InGaAs PHEMTs for power applications
Chertouk, M.; Bürkner, S.; Bachem, K.H.; Pletschen, W.; Kraus, S.; Braunstein, J.; Tränkle, G.
Journal Article
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Journal Article
1998GaInP/GaInAs/GaAs-MODFETs with pseudomorphic GaInP barriers, device concept and device properties
Pletschen, W.; Bachem, K.H.; Chertouk, M.; Bürkner, S.; Braunstein, J.
Conference Paper
1998Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In(0.53)Ga(0.47)As
Wagner, J.; Peter, M.; Winkler, K.; Bachem, K.H.
Journal Article
1998MOCVD growth of (Ga(1-x)In(x)As-GaAs(1-y)Sb(y))superlattices on InP showing type-II emission at wavelengths beyond 2 mu m
Peter, M.; Winkler, K.; Herres, N.; Fuchs, F.; Müller, S.; Bachem, K.H.; Wagner, J.
Conference Paper
1998Quantenschichtstruktur
Bachem, K.H.; Fekete, D.
Patent
1998Spectroscopic ellipsometry characterization of (InGa)N on GaN
Wagner, J.; Ramakrishnan, A.; Behr, D.; Obloh, H.; Kunzer, M.; Bachem, K.H.
Journal Article
1997Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
Niebuhr, R.; Bachem, K.H.; Kaufmann, U.; Maier, M.; Merz, C.; Santic, B.; Schlotter, P.; Jürgensen, H.
Journal Article
1997Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications
Pereiaslavets, B.; Martin, G.H.; Eastman, L.F.; Yanka, R.W.; Ballingall, J.M.; Braunstein, J.; Bachem, K.H.; Ridley, B.K.
Journal Article
1997A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor
Gobert, Y.; Tasker, P.J.; Bachem, K.H.
Journal Article
1997Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Journal Article
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Conference Paper
1997Structural and optical properties of AlGaN/GaN quantum well structures grown by MOCVD on sapphire
Niebuhr, R.; Bachem, K.H.; Behr, D.; Hoffmann, C.; Kaufmann, U.; Lu, Y.; Santic, B.; Wagner, J.; Arlery, M.; Rouviere, J.L.; Jürgensen, H.
Conference Paper
1996GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE. Design, fabrication, and device results
Pereiaslavets, B.; Bachem, K.H.; Braunstein, J.; Eastman, L.F.
Journal Article
1996Resonant multi-LO-phonon Raman scattering in hexagonal GaN
Behr, D.; Wagner, J.; Niebuhr, R.; Merz, C.; Bachem, K.H.; Amano, H.; Akasaki, I.
Conference Paper
1995Dry etching of GaN at low pressure
Pletschen, W.; Niebuhr, R.; Bachem, K.H.
Conference Paper
1995Dynamics of the H-CAs complex in GaAs determined from Raman measurements
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Journal Article
1995The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Conference Paper
1995Elastic contants and Poisson ratio in the system AlAs-GaAs
Herres, N.; Köhler, K.; Krieger, M.; Sigg, H.; Bachem, K.H.
Journal Article
1995A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics
Peter, M.; Forker, J.; Winkler, K.; Bachem, K.H.; Wagner, J.
Journal Article
1995Pseudomorphic AlGaInP/GaAs MODFETs, novel device concepts for simple fabrication schemes
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1995Realization and modeling of a pseudomorphic (GaAs(1-x)Sb(x)-In(y)Ga(1-y)As)/GaAs bilayer-quantum well
Peter, M.; Winkler, K.; Maier, N.; Herres, N.; Wagner, J.; Fekete, D.; Bachem, K.H.; Richards, D.
Journal Article
199435-40 GHz monolithic VCO's utilizing high-speed GaInP/GaAs HBT's
Riepe, K.; Leier, H.; Marten, A.; Güttich, U.; Dieudonne, J.M.; Bachem, K.H.
Journal Article
1994AlGaInP/GaInAs/GaAs MODFET devices with self-aligned p+ -GaAs gate structure.
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1994AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties
Bachem, K.H.; Pletschen, W.; Winkler, K.; Fleissner, J.; Hoffmann, C.; Tasker, P.J.
Conference Paper
1994High performance GaInP/GaAs hole barrier bipolar transistors -HBBTs-
Leier, H.; Schaper, U.; Bachem, K.H.
Conference Paper
1994High quality MOCVD-grown AlGaInP/GaAs MODFET structures - an example of successful interface engineering.
Pletschen, W.; Bachem, K.H.; Rothemund, W.; Winkler, K.; Fekete, D.
Conference Paper
1994Influence of annealing on electron lifetimes in transistor base-layers on GaAs-C
Strauss, U.; Heberle, A.P.; Rühle, W.W.; Tews, H.; Lauterbach, T.; Bachem, K.H.
Conference Paper
1994Influence of substrate dislocations on epitaxial layers studied by photoluminescence microscopy and topography
Baeumler, M.; Larkins, E.C.; Bachem, K.H.; Bernklau, D.; Riechert, H.; Ralston, J.D.; Jantz, W.
Conference Paper
1994K-band dielectric resonator oscillator using a GaInP/GaAs HBT
Güttich, U.; Leier, H.; Marten, A.; Riepe, K.; Pletschen, W.; Bachem, K.H.
Conference Paper
1993AlGaInP/GaInAs/GaAs MODFET devices - candidates for optoelectronic integrated circuits
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Journal Article
1993Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements.
Koidl, P.; Uzan-Saguy, C.; Kalish, R.; Bruder, M.; Bachem, K.H.; Wagner, J.
Journal Article
1993High speed selfaligned GaInP/GaAs HBBTs.
Leier, H.; Marten, A.; Pletschen, W.; Tasker, P.J.; Bachem, K.H.
Journal Article
1993Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Journal Article
1992Chemical transport reactions during crystal growth of PbTe and PbSe via vapour phase influenced by AgI.
Stöber, D.; Hildmann, B.O.; Böttner, H.; Schelb, S.; Binnewies, M.; Bachem, K.H.
Journal Article
1992GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE.
Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992High speed non-selfaligned GaInP/GaAs-TEBT.
Zwicknagl, P.; Schaper, U.; Schleicher, L.; Siweris, H.; Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992Ion irradiation damage in n-type GaAs in comparison with its electron irradiation damage.
Eisen, F.H.; Bachem, K.H.; Klausman, E.; Köhler, K.; Haddad, R.
Journal Article
1992Low temperature photoluminescence topography of MOCVD-grown InGaP, AlGaAs and AlGaAs/GaAs single quantum wells.
As, D.J.; Korf, S.; Wang, Z.M.; Bachem, K.H.; Jantz, W.; Windscheif, J.
Conference Paper
1992MOVPE growth, technology and characterization of Ga0.5In0.5P/GaAs heterojunction bipolar transistors
Bachem, K.H.; Pletschen, W.; Winkler, K.; Lauterbach, T.; Maier, M.
Conference Paper
1992A novel GaAs bipolar transistor structure with GaInP-hole injection blocking barrier.
Pletschen, W.; Bachem, K.H.; Lauterbach, T.
Conference Paper
1992OMVPE-grown AlxGa1-x0.5In0.5P/InGaAs MODFET structures - growth procedure and hall properties.
Bachem, K.H.; Fekete, D.; Pletschen, W.; Rothemund, W.; Winkler, K.
Journal Article
1992Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Conference Paper
1992Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy.
Wang, Z.M.; As, D.J.; Windscheif, J.; Bachem, K.H.; Jantz, W.
Journal Article
1992Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers.
Bachem, K.H.; Ashwin, M.; Newman, R.C.; Woodhouse, K.; Nicklin, R.; Bradley, R.R.; Lauterbach, T.; Maier, M.; Wagner, J.
Journal Article
1992Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers
Bachem, K.H.; Mörsch, G.; Kamp, M.; Fischer, A.; Lauterbach, T.; Maier, M.; Ploog, K.; Wagner, J.
Journal Article
1991Advanced high electron concentration GaAs/AlxGa1-xAs pulse-doped double heterostructure for device application
Bachem, K.H.; Hornung, J.; Hülsmann, A.; Ganser, P.; Köhler, K.; Maier, M.
Conference Paper
1991Emitter-base electron transport in GaInP/GaAs heterojunction bipolar transistors and tunnel emitter bipolar transistors.
Bachem, K.H.; Pletschen, W.; Lauterbach, T.; Shur, M.
Conference Paper
1991Heavy carbon doping in metal-organic vapor phase epitaxy -MOVPE- for GaAs using trimethylarsine
Neumann, G.; Bachem, K.H.; Lauterbach, T.; Maier, M.
Conference Paper
1991Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures - influence of Si-segregation on the two-dimensional electron gas.
Bachem, K.H.; Ganser, P.; Köhler, K.; Maier, M.
Journal Article
1990Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J.
Journal Article
1990Extreme low power 1 to 4 demultiplexer using double delta doped Quantum Well GaAs/AlGaAs transistors.
Nowotny, U.; Hurm, V.; Lang, M.; Kaufel, U.; Hülsmann, A.; Scheider, J.; Jakobus, T.; Bachem, K.H.; Berroth, M.; Hoffmann, C.; Köhler, K.
Conference Paper
1990Influence of dry etch conditions on the properties of Schottky contacts to n-GaAs
Pletschen, W.; Bachem, K.H.; Hornung, J.; Kaufel, G.; Köhler, K.
Conference Paper
1990Influence of plasma and ion beams on the electrical properties on n-GaAs Schottky diodes.
Pletschen, W.; Bachem, K.H.
Journal Article
1990Investigation of the interface of GaAs/AlGaAs heterostructures.
Schweizer, T.; Bachem, K.H.; As, D.J.; Ganser, P.; Köhler, K.
Journal Article
1990Molekularstrahlepitaxieanlage
Bachem, K.H.; Koehler, K.; Hofmann, P.
Patent
1989Gas phase depletion in horizontal MOCVD reactors.
Neumann, G.; Winkler, K.; Bachem, K.H.
Conference Paper
1989Gasversorgungseinrichtung fuer eine Molekularstrahlepitaxieanlage
Bachem, K.H.; Hofmann, P.; Koehler, K.
Patent
1989Properties of WSix-Schottky diodes on n-type GaAs sputtered under UHV background conditions
Pletschen, W.; Kaufel, G.; Maier, M.; Olander, E.; Wiegert, J.; Bachem, K.H.; Rupprecht, H.S.
Conference Paper
1988Channeling of Si during implantation into GaAs for MESFETs
Maier, M.; Bachem, K.H.; Hornung, J.
Conference Paper
1987On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction.
Rosman, R.; Norton, P.; Bachem, K.H.; Katzir, A.; Preier, H.M.
Journal Article
198677 K cw operation of distributed Bragg reflector Pb1-XSnXSe/Pb1-X-YEuYSnXSe diode lasers.
Norton, P.; Shani, Y.; Bachem, K.H.; Katzir, A.; Preier, H.M.; Tacke, M.
Journal Article
1986Pb1-XEuXSe for IR device applications
Norton, P.; Bachem, K.H.; Tacke, M.
Conference Paper
1985VORRICHTUNG ZUR KONTINUIERLICHEN MESSUNG DER DICKE
Neske, E.; Bergmann, E.; Bachem, K.H.; Kulmus, K.; Bachem, D.
Patent
1984Fluessigkeitskuevette
Bachem, K.H.; Boettner, H.; Grisar, R.; Knothe, M.; Riedel, W.; Preier, H.M.
Patent
1984Halbleiter-Emitter fuer den mittleren und fernen infraroten Spektralbereich
Bachem, K.H.
Book Article
1984Investigation of diffusion length and lifetime in lead chalcogenides by electron-beam-induced-current measurements at low temperatures.
Eisenbeiss, A.; Heinrich, H.; Jakubowicz, A.; Maurer, W.; Palmetshofer, L.; Bachem, K.H.; Boettner, H.; Preier, H.M.
Journal Article
1984MBE - A tool for fabricating IV-VI compound diode lasers.
Norton, P.; Bachem, K.H.; Preier, H.M.
Book Article
1983Cd-diffused lead salt diode lasers and their application in multicomponent gas analysis systems
Jakubowicz, A.; Eisenbeiss, A.; Bachem, K.H.; Ball, D.; Boettner, H.; Preier, H.M.; Riedel, W.J.
Conference Paper
1983Simulation der Temperaturverteilung von Bleisalz-Halbleiterlasern
Muenther, C.; Bachem, K.H.
Journal Article
1982NTG-Diskussionstagung ueber integrierte Optik in Freiburg
Bachem, K.H.; Kist, R.
Journal Article