Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Real-time laser cladding control with variable spot size
Arias, J.L.; Montealegre, M.A.; Vidal, F.; Rodriguez, J.; Mann, S.; Abels, P.; Motmans, F.
Conference Paper
2000Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique
Arias, J.; Esquivias, I.; Larkins, E.C.; Burkner, S.; Weisser, S.; Rosenzweig, J.
Journal Article
1997Carrier escape time in quantum well lasers: dependence on injection level, doping concentration, and temperature
Romero, B.; Esquivias, I.; Arias, J.; Batko, G.; Weisser, S.; Rosenzweig, J.
Conference Paper
1997Characterization and modeling of InGaAs/GaAs multi-quantum well lasers by capacitance-voltage measurements
Arias, J.; Esquivias, I.; Bürkner, S.; Chazan, P.; Ralston, J.D.; Larkins, E.C.; Mikulla, M.; Weisser, S.; Rosenzweig, J.
Conference Paper
1996Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1996Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M.
Journal Article
1994Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.; Arias, J.
Conference Paper