Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2021Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN
Wolff, Niklas; Fichter, Simon; Haas, Benedikt; Islam, Md Redwanul; Niekiel, Florian; Kessel, Maximilian; Ambacher, Oliver; Koch, Christoph; Wagner, Bernhard; Lofink, Fabian; Kienle, Lorenz
Journal Article
2021Development and evaluation of a GaAs based 300 GHz module
Dyck, Alexander
: Backofen, Rolf; Ambacher, Oliver; Kallfass, Ingmar
Dissertation
2021First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N
Urban, D.F.; Ambacher, Oliver; Elsässer, C.
Journal Article
2021Growth and fabrication of quasivertical current aperture vertical electron transistor structures
Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver
Journal Article
2021High-Q AlGaN/GaN Varactors for Mobile Communication Systems
Amirpour, Raul
: Ambacher, Oliver
Dissertation
2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Manz, Christian; Leone, Stefano; Kirste, Lutz; Ligl, Jana; Frei, Kathrin; Fuchs, Theodor; Prescher, Mario; Waltereit, Patrick; Verheijen, Marcel A.; Graff, Andreas; Simon-Najasek, Michél; Altmann, Frank; Fiederle, Michael; Ambacher, Oliver
Journal Article
2021Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer
Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2020A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2020A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2020Broadband and high-gain 400-GHz InGaAs mHEMT medium-power amplifier S-MMIC
Gashi, Bersant; John, Laurenz; Meier, D.; Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2020Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente
Manz, Christian
: Bast, H.; Ambacher, Oliver; Fiederle, M.
Dissertation
2020Determining Elastic Constants of AlScN Films on Silicon Substrates by Laser Ultrasonics
Rogall, Olga; Feil, Niclas M.; Ding, Anli; Mayer, Elena; Pupyrev, Pavel D.; Lomonosov, Alexey M.; Zukauskaite, Agne; Ambacher, Oliver; Mayer, Andreas P.
Conference Paper
2020Development and evaluation of a GaAs based 300 GHz module
Dyck, Alexander
: Ambacher, Oliver (Gutachter); Kallfass, Ingmar (Gutachter)
Dissertation
2020Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al₀.₇₇Sc₀.₂₃N (1120) thin films
Ding, Anli; Kirste, Lutz; Lu, Yuan; Driad, Rachid; Kurz, Nicolas; Lebedev, Vadim; Christoph, Tim; Feil, Niclas M.; Lozar, Roger; Metzger, Thomas; Ambacher, Oliver; Zukauskaite, Agne
Journal Article
2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver
Journal Article
2020Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2020First demonstration of G-band broadband GaN power amplifier MMICs operating beyond 200 GHz
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Krause, Sebastian; Friesicke, Christian; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2020A fully-integrated W-band I/Q-down conversion MMIC for use in radio astronomical multi-pixel receivers
Thome, Fabian; Ture, Erdin; Leuther, Arnulf; Schäfer, Frank; Navarrini, Alessandro; Serres, Patrice; Ambacher, Oliver
Conference Paper
2020A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2020High-Q AlGaN/GaN Varacators for Mobile Communication Systems
Amirpour, Raul
: Ambacher, Oliver (Referent); Reindl, Leonhard (Referent); Manoli, Y. (Referent)
Dissertation
2020In-Plane Oriented Stacks of c-AlScN/Mo (110) for BAW Resonators Grown by Magnetron Sputter Epitaxy
Sundarapandian, Balasubramanian; Kessel, Matthias; Zukauskaite, Agne; Kirste, Lutz; Sun, Cheng; Ambacher, Oliver
Conference Paper
2020Influence of Different Surface Morphologies on the Performance of High-Voltage, Low-Resistance Diamond Schottky Diodes
Reinke, Philipp; Benkhelifa, Fouad; Kirste, Lutz; Czap, Heiko; Pinti, Lucas; Zürbig, Verena; Cimalla, Volker; Nebel, Christoph E.; Ambacher, Oliver
Journal Article
2020Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Journal Article
2020Low-loss millimeter-wave SPDT switch MMICs in a Metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Ambacher, Oliver
Journal Article
2020Metal-organic chemical vapor deposition of aluminum scandium nitride
Leone, Stefano; Ligl, Jana; Manz, Christian; Kirste, Lutz; Fuchs, Theo; Menner, Hanspeter; Prescher, Mario; Wiegert, Joachim; Zukauskaite, Agne; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2020Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
Ligl, Jana; Leone, Stefano; Manz, Christian; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Prescher, Mario; Ambacher, Oliver
Journal Article
2020Microstructural and optical emission properties of diamond multiply twinned particles
Lebedev, Vadim; Yoshikawa, Taro; Schreyvogel, Christoph; Kirste, Lutz; Weippert, Jürgen; Kunzer, Michael; Graff, Andreas; Ambacher, Oliver
Journal Article
2020Monolithic integration of inductive components in a GaN-on-Si technology
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2020Monolithic millimeter-wave integrated circuits for low-power wireless communication systems with high data rates
Thome, Fabian
: Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent)
Dissertation
2020Monolithic Millimeter-Wave Integrated Circuits for Low-Power Wireless Communication Systems with High Data Rates
Thome, Fabian
: Bast, H.; Ambacher, Oliver; Kallfass, Ingmar
Dissertation
2020Noise performance of Sub-100-nm metamorphic HEMT technologies
Heinz, Felix; Thome, Fabian; Leuther, Arnulf; Ambacher, Oliver
Conference Paper
2020Non-Polar a-plane AlScN(1120) Thin Film Based SAW Resonantors with Significantly Improved Electromechanical Coupling
Ding, Anli; Driad, Rachid; Lu, Yuan; Feil, Niclas M.; Kirste, Lutz; Christoph, Tim; Ambacher, Oliver; Zukauskaite, Agne
Conference Paper
2020A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2020Novel Method for Extracting Material Constants of Epitaxial Wurtzite AlScN Films on Sapphire Using Higher Order Surface Acoustic Wave Modes
Feil, Niclas M.; Mayer, Elena; Christian, Björn; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver
Conference Paper
2020Optimization of metal-organic chemical vapor deposition regrown n-GaN
Leone, Stefano; Brueckner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2020Reduktive elektrochemische Exofoliation von Graphenflocken
Roscher, Sarah
: Ambacher, Oliver (Gutacher); Fiederle, Michael
Dissertation
2020Reliability characteristics of vertical pin diodes on Si and GaN substrates for high-power applications
Gupta, Rohit
: Ambacher, Oliver (Erstprüfer); Quay, Rüdiger (Zweitprüfer); Driad, Rachid (Supervisor)
Master Thesis
2020Si-substrate removal for AlGaN/GaN devices on PCB carriers
Reiner, Richard; Gerrer, Thomas; Weiss, Beatrix; Waltereit, Patrick; Mönch, Stefan; Meder, Dirk; Sinnwell, Matthias; Dammann, Michael; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019AlGaN avalanche Schottky diodes with high Al-content
Watschke, Lars; Passow, Thorsten; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Leone, Stefano; Rehm, Robert; Ambacher, Oliver
Journal Article, Conference Paper
2019AlGaN-basierte Avalanche Photodioden für den UV-C Spektralbereich
Watschke, Lars
: Ambacher, Oliver (Referent); Wöllenstein, Jürgen (Referent)
Dissertation
2019AlGaN-basierte Avalanche-Photodioden für den UV-C Spektralbereich
Watschke, Lars
: Ambacher, Oliver; Wöllenstein, J.
Dissertation
2019AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019Analyse der Rauschmechanismen von Photodetektoren aus InAs/GaSb Übergittern für den infraroten Spektralbereich
Wörl, Andreas
: Ambacher, Oliver (Referent); Glunz, Stefan (Referent)
Dissertation
2019Analyse der Rauschmechanismen von Photodetektoren aus InAs/GaSb-Übergittern für den infraroten Spektralbereich
Wörl, Andreas
: Bast, H.; Ambacher, O.; Glunz, S.
Dissertation
2019Antimonidische Übergitter Infrarot-Photodioden mit reduziertem Dunkelstrom
Schmidt, Johannes
: Ambacher, Oliver (Referent); Fiederle, Michael (Referent)
Dissertation
2019Antimonidische Übergitter Infrarot-Photodioden mit reduziertem Dunkelstrom
Schmidt, Johannes
: Bast, H.; Ambacher, O.; Fiederle, M.
Dissertation
2019Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Basler, Michael; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2019D-band and G-band high-performance GaN power amplifier MMICs
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Massler, Hermann; Lozar, Roger; Wagner, Sandrine; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2019Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente
Manz, Christian
: Ambacher, Oliver (Referent); Fiederle, Michael (Referent)
Dissertation
2019Determination of the graphene-graphite ratio of graphene powder by Raman 2D band symmetry analysis
Roscher, Sarah; Hoffmann, René; Ambacher, Oliver
Journal Article
2019Development and characterization of piezoelectric AlScN-based alloys for electroacoustic applications
Lu, Yuan
: Ambacher, Oliver (Referent); Fiederle, Michael (Referent)
Dissertation
2019Diamond Schottky-Diode in a non-isolated buck converter
Reiner, Richard; Zürbig, Verena; Pinti, Lucas; Reinke, Philipp; Meder, Dirk; Mönch, Stefan; Benkhelifa, Fouad; Quay, Rüdiger; Cimalla, Volker; Nebel, Christoph E.; Ambacher, Oliver
Conference Paper
2019A dielectric-filled cavity-backed lens-coupled dipole antenna at 100 GHz
Dyck, Alexander; Kuri, Michael; Rösch, Markus; Tessmann, Axel; Ambacher, Oliver
Conference Paper
2019Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2019Experimental determination of Al1-xScxN thin film thermo-electro-acoustic properties up to 140°C by using SAW resonators
Ding, Anli; Kurz, Nicolas; Driad, Rachid; Lu, Yuan; Lozar, Roger; Christoph, Tim; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne
Conference Paper
2019Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
Kurz, N.; Ding, Anli; Urban, F.D.; Lu, Yuan; Kirste, Lutz; Feil, N.M.; Zukauskaite, Agne; Ambacher, Oliver
Journal Article
2019Finite element analysis of SAW propagation characteristics in c-plane (0001) and a-plane (11-20) ALScN thin films
Feil, Niclas M.; Kurz, Nicolas; Urban, Daniel F.; Altayara, Abdullah; Bjoern, Christian; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver
Conference Paper
2019Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth
Lebedev, Vadim; Yoshikawa, Taro; Giese, Christian; Kirste, Lutz; Zukauskaite, Agne; Graff, Andreas; Meyer, Frank; Burmeister, Frank; Ambacher, Oliver
Journal Article
2019A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2019GCPW GaAs broadside couplers at H-band and application to balanced power amplifiers
Amado-Rey, Ana Belén; Campos-Roca, Yolanda; Friesicke, Christian; Wagner, Sandrine; Ambacher, Oliver
Journal Article
2019Graphene - from Synthesis to the Application as a Virtually Massless Electrode Material for Bulk Acoustic Wave Resonators
Knapp, Marius David
: Ambacher, Oliver (Referent); Paul, Oliver (Referent)
Dissertation
2019High voltage electrochemical exfoliation of graphite for high-yield graphene production
Roscher, Sarah; Hoffmann, René; Prescher, Mario; Knittel, Peter; Ambacher, Oliver
Journal Article
2019High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019Highly scalable distributed high electron mobility transistor model
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Ambacher, Oliver
Conference Paper
2019Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis
Yoshikawa, Taro; Herrling, David; Meyer, Frank; Burmeister, Frank; Nebel, Christoph E.; Ambacher, Oliver; Lebedev, Vadim
Journal Article
2019Integrated 2-b riemann pump RF-DAC in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2019Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael
Journal Article, Conference Paper
2019Investigation of the use of MOSHEMT based amplifiers in direct receivers for radiometry applications
Bansal, Nikesh
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent)
Master Thesis
2019Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2019Luminescence Properties of SiV-centers in diamond diodes
Tegetmeyer, Björn
: Ambacher, Oliver
Dissertation
2019MBE of III-Nitride Semiconductors for Electronic Devices
Aidam, Rolf; Ambacher, Oliver; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Lim, T.; Quay, Rüdiger; Waltereit, Patrick
Book Article
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2019Modenverhalten von Quantenkaskadenlasern in miniaturisierten externen Resonatoren
Butschek, Lorenz
: Ambacher, Oliver; Buse, K.; Glunz, S.; Rohrbach, A.
Dissertation
2019Optical constants and band gap of wurtzite Al₁₋ₓScₓN/Al₂O₃ prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
Baeumler, Martina; Lu, Yuan; Kurz, Nicolas; Kirste, Lutz; Prescher, Mario; Christoph, Tim; Wagner, Joachim; Zukauskaite, Agne; Ambacher, Oliver
Journal Article
2019A pseudo-complementary GaN-based gate driver with Reduced Static Losses
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Conference Paper
2019RF-noise model extraction procedure for distributed multiport models
Heinz, Felix; Schwantuschke, Dirk; Ohlrogge, Matthias; Leuther, Arnulf; Ambacher, Oliver
Conference Paper
2019Transfer von AlGaN/GaN-Hochleistungstransistoren auf Diamant
Gerrer, Thomas
: Ambacher, Oliver (Referent); Woias, Peter
Dissertation
2019A transmitter system-in-package at 300 GHz with an off-chip antenna and GaAs-based MMICs
Dyck, Alexander; Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Kuri, Michael; Wagner, Sandrine; Gashi, Bersant; Schäfer, Jochen; Ambacher, Oliver
Journal Article
2019Untersuchung der elektro-akustischen und pyroelektrischen Eigenschaften von Aluminium-Scandium-Nitrid für mikroakustische Hochfrequenzfilter
Kurz, Nicolas
: Ambacher, Oliver (Referent); Reindl, Leonhard (Referent)
Dissertation
2019W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver
Conference Paper
2018A 300 GHz microstrip multilayered antenna on quartz substrate
Dyck, Alexander; Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Kuri, Michael; Massler, Hermann; Wagner, Sandrine; Meder, Dirk; Weismann-Thaden, Birgit; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
201870-116-GHz LNAs in 35-nm and 50-nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation
Thome, Fabian; Leuther, Arnulf; Gallego, Juan Daniel; Schäfer, Frank; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2018AlN-based Electro-Acoustic Sensors for Analytics in Liquids
Reusch, Markus
: Ambacher, Oliver (Referent); Fiederle, Michael (Referent)
Dissertation
2018Analysis and development of submillimeter-wave stacked-FET power amplifier MMICs in 35-nm mHEMT technology
Amado-Rey, Ana Belén; Campos-Roca, Yolanda; Raay, Friedbert van; Friesicke, Christian; Wagner, Sandrine; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Journal Article
2018Analysis of 4-way divider MMICs in GaAs technology for H-band applications
Amado-Rey, Belén; Campos-Roca, Yolanda; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Conference Paper
2018Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
Amado Rey, Ana Belén
: Paul, Oliver; Ambacher, Oliver; Campos-Roca, Y.
Dissertation
2018Analysis, design, and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
Amado-Rey, Ana Belén
: Ambacher, Oliver (Referent); Campos-Roca, Yolanda (Referent)
Dissertation
2018Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
Hahn, Lars; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Passow, Thorsten; Köhler, Klaus; Rehm, Robert; Ambacher, Oliver
Journal Article
2018Broadband high-power W-band amplifier MMICs based on stacked-HEMT unit cells
Thome, Fabian; Leuther, Arnulf; Schlechtweg, Michael; Ambacher, Oliver
Journal Article
2018Determination of elastic and piezoelectric properties of Al0.84Sc0.16N thin films
Kurz, Nicolas; Parsapour, Fazel; Pashchenko, Vladimir; Kirste, Lutz; Lebedev, Vadim; Pascal, Nicolay; Muralt, Paul; Ambacher, Oliver
Conference Paper
2018Dynamic load modulated low-voltage GaN PA using novel low-loss GaN varactors
Amirpour, Raul; Krause, Sebastian; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin films
Lu, Yuan; Reusch, Markus; Kurz, Nicolas; Ding, Anli; Christoph, Tim; Prescher, Mario; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne
Journal Article
2018Entwicklung piezoelektrisch adaptiver Aluminiumnitrid/Diamant-Linsen für mikrooptische Systeme
Knöbber, Fabian Andreas
: Ambacher, Oliver; Wallrabe, Ulrike
Dissertation
2018Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
Weiß, Beatrix
: Paul, O.; Ambacher, O.; Maksimovic, D.
Dissertation
2018Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2018A G-band broadband balanced power amplifier module based on cascode mHEMTs
Amado-Rey, Belén; Campos-Roca, Yolanda; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Journal Article
2018GaN-based high electron mobility transistors with high Al-content barriers
Godejohann, Birte-Julia
: Paul, Oliver; Ambacher, Oliver; Fiederle, M.
Dissertation
2018Graphene as an active virtually massless top electrode for RF solidly mounted bulk acoustic wave (SMR-BAW) resonators
Knapp, Marius; Hoffmann, René; Lebedev, Vadim; Cimalla, Volker; Ambacher, Oliver
Journal Article
2018High-power asymmetrical three-way GaN doherty power amplifier at C-band frequencies
Derguti, Edon; Ture, Erdin; Krause, Sebastian; Schwantuschke, Dirk; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Highly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330 GHz
Thome, Fabian; Ambacher, Oliver
Journal Article
2018Infrarotspektroskopie mittels nichtlinear-optischer Hochkonversion
Wolf, Sebastian
: Buse, Karsten (Erstgutachter); Ambacher, Oliver (Zweitgutachter)
Dissertation
2018Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2018Investigation of temperature characteristics and substrate influence on AlScN-based SAW resonators
Ding, Anli; Reusch, Markus; Lu, Yuan; Kurz, Nicolas; Lozar, Roger; Christoph, Tim; Driad, Rachid; Ambacher, Oliver; Zukauskaite, Agne
Conference Paper
2018Investigations of active antenna doherty power amplifier modules under beam-steering mismatch
Gashi, Bersant; Krause, Sebastian; Quay, Rüdiger; Fager, Christian; Ambacher, Oliver
Journal Article
2018Luminescence properties of SiV-centers in diamond diodes
Tegetmeyer, Björn
: Ambacher, Oliver
Dissertation
2018Metallization design investigations for graphene as a virtually massless electrode material for 2.1 GHz solidly mounted (BAW-SMR) resonators
Knapp, Marius; Lebedev, Vadim; Cimalla, Volker; Ambacher, Oliver
Conference Paper
2018Modenverhalten von Quantenkaskadenlasern in miniaturisierten externen Resonatoren
Butschek, Lorenz
: Ambacher, Oliver (Referent); Buse, Karsten (Referent)
Dissertation
2018Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018A novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Raay, Friedbert van; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018PCB-embedding for GaN-on-Si power devices and ICs
Reiner, Richard; Weiss, Beatrix; Meder, Dirk; Waltereit, Patrick; Vockenberger, C.; Gerrer, Thomas; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018RF-noise modeling of InGaAs metamorphic HEMTs and MOSFETs
Heinz, Felix; Schwantuschke, Dirk; Leuther, Arnulf; Tessmann, Axel; Ohlrogge, Matthias; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Riemann-pump based RF-power DACs in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018Spurious mode suppression in the design of GCPW submillimeter-wave power amplifiers
Amado-Rey, Belén; Tessmann, Axel; Campos-Roca, Yolanda; Massler, Hermann; Leuther, Arnulf; Ambacher, Oliver
Conference Paper
2018State dependency, low-frequency dispersion, and thermal effects in microwave III-V HEMTs
Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2018Temperature cross-sensitivity of AlN-based flexural plate wave sensors
Reusch, Markus; Holc, Katarzyna; Lebedev, Vadim; Kurz, Nicolas; Zukauskaite, Agne; Ambacher, Oliver
Journal Article
2018Temperature dependence of the pyroelectric coefficient of AlScN thin films
Kurz, Nicolas; Lu, Yuan; Kirste, Lutz; Reusch, Markus; Zukauskaite, Agne; Lebedev, Vadim; Ambacher, Oliver
Journal Article
2018Towards highly-integrated high-voltage multi-MHz GaN-on-Si power ICs and modules
Moench, S.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Kaden, T.; Ambacher, O.; Kallfass, I.
Conference Paper
2018Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Ambacher, Oliver; Quay, Rüdiger
Journal Article, Conference Paper
2018Voltage- and temperature-dependent degradation of AIN/GaN high electron mobility transistors
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2018W-Band FMCW MIMO radar demonstrator system for 3D imaging
Bleh, Daniela Karina
: Paul, Oliver; Ambacher, Oliver; Yang, Bin
Dissertation
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
Thome, Fabian; Ambacher, Oliver
Conference Paper
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Journal Article
2017Characterization and optimization of nanoscale magnetometric diamond sensors
Widmann, C.J.
: Ambacher, O. (Referent); Degen, C. (Referent)
Dissertation
2017Characterization and optimization of nanoscale magnetometric diamond sensors
Widmann, Claudia Johanna
: Lausen, G.; Ambacher, O.; Degen, C.
Dissertation
2017Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion
Solowan, Hans-Michael
: Ambacher, Oliver (Ed.); Schwarz, U.T.; Wöllenstein, J.
Dissertation
2017Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2017A contribution to active infrared laser spectroscopy for remote substance detection
Jarvis, Jan-Philip
: Beyerer, Juergen (Referent); Ambacher, Oliver
Dissertation
2017Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Design and characterization of highly-efficient GaN-HEMTs for power applications
Reiner, Richard
: Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer)
Dissertation
2017Design, realization, and evaluation of a Riemann pump in GaN technology
Weiß, Markus; Friesicke, Christian; Metzger, Thomas; Schmidhammer, Edgar; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2017Epitaxie und Charakterisierung von AlGaN-basierten UV-Photodetektoren
Albrecht, B.
: Lausen, G.; Ambacher, O. (Ed.); Eberl, C. (Referent)
Dissertation
2017Fast-switching monolithically integrated high-voltage GaN-on-Si power converters
Weiß, Beatrix
: Ambacher, Oliver (Betreuer); Makismović, Dragan (Betreuer)
Dissertation
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Flexural plate wave sensors with buried IDT for sensing in liquids
Reusch, Markus; Holc, Katarzyna; Zukauskaite, Agne; Lebedev, Vadim; Kurz, Nicolas; Ambacher, Oliver
Conference Paper
2017GaN-based Tri-gate high electron mobility transistors
Ture, Erdin
: Ambacher, Oliver (Referent); Bolognesi, Colombo R. (Referent); Palacios, Tomas (Referent)
Dissertation
2017InGaAs-Avalanche-Photodioden für bildgebende Verfahren im kurzwelligen Infrarot
Kleinow, Philipp
: Lausen, G.; Ambacher, O.; Koos, C.
Dissertation
2017Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Investigations of efficient active antenna power amplifier modules for 5G applications under beam control mismatch
Gashi, Bersant
: Ambacher, Oliver (Referent); Quay, Rüdiger (Referent); Krause, Sebastian (Betreuer)
Master Thesis
2017Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices
Reusch, Markus; Cherneva, Sabina; Lu, Yuan; Zukauskaite, A.; Kirste, L.; Holc, K.; Datcheva, M.; Stoychev, D.; Lebedev, V.; Ambacher, O.
Journal Article
2017Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Nanodiamond resonators fabricated on 8'' Si substrates using adhesive wafer bonding
Lebedev, Vadim; Lisec, Thomas; Yoshikawa, Taro; Reusch, Markus; Iankov, Dimitre; Giese, Christian; Zukauskaite, Agne; Cimalla, Volker; Ambacher, Oliver
Journal Article
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Optimierung der Mikrostruktur und der Messparameter eines photostimulierten Ozonsensors auf der Basis von Indiumoxid
Mischo, Markus
: Paul, O.; Ambacher, O.; Krischok, S.
Dissertation
2017Piezo-aktuierte mikro-opto-elektro-mechanische Systeme für aktive Mikrooptik
Zürbig, Verena
: Ambacher, Oliver (Referent); Lebedev, Vadim (Betreuer)
Dissertation
2017Reliability analysis of LPCVD SiN gate dielectric for AlGaN/GaN MIS-HEMTs
Jauss, S.A.; Hallaceli, K.; Mansfeld, S.; Schwaiger, S.; Daves, W.; Ambacher, O.
Journal Article
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Wagner, Joachim; Lausen, G.; Ambacher, O.; Schwierz, F.
Dissertation
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias
: Ambacher, Oliver (Referent); Schwierz, Frank (Referent)
Dissertation
2017Spectroscopic millimeter wave ellipsometry
Klenner, Mathias
: Ambacher, Oliver (Referent)
Dissertation
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Conference Paper
2017Toward ultra-thin nanocrystalline diamond film growth: Electrostatic self-assembly of non-aggregated diamond nanoparticles onto substrate surfaces
Yoshikawa, Taro
: Ambacher, Oliver; Fiederle, Michael
Dissertation
2017Untersuchung des Hochfrequenzrauschens von InGaAs-Transistoren
Heinz, Felix
: Ambacher, Oliver (Referent); Schwantuschke, Dirk (Betreuer)
Master Thesis
2017W-Band FMCW MIMO radar demonstrator system for 3D imaging
Bleh, Daniela
: Ambacher, Oliver (Referent); Yang, Bin (Referent)
Dissertation
2017W-Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging
Bleh, Daniela; Rösch, Markus; Kuri, Michael; Dyck, Alexander; Tessmann, Axel; Leuther, Arnulf; Wagner, Sandrine; Weismann-Thaden, Birgit; Stulz, Hans-Peter; Zink, Martin; Rießle, Markus; Sommer, R.; Wilcke, J.; Schlechtweg, Michael; Yang, B.; Ambacher, Oliver
Journal Article
2017Wettability investigations and wet transfer enhancement of large-area CVD-graphene on aluminum nitride
Knapp, Marius; Hoffmann, René; Cimalla, Volker; Ambacher, Oliver
Journal Article
2016A 100 GHz FMCW MIMO radar system for 3D image reconstruction
Bleh, D.; Rösch, M.; Kuri, M.; Dyck, A.; Tessmann, A.; Leuther, A.; Wagner, S.; Ambacher, O.
Conference Paper
2016A 280 GHz stacked-FET power amplifier cell using 50 nm metamorphic HEMT technology
Amado-Rey, A.B.; Campos-Roca, Y.; Friesicke, C.; Tessmann, A.; Lozar, R.; Wagner, S.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-Band
Friesicke, C.; Feuerschütz, P.; Quay, R.; Ambacher, O.; Jacob, A.F.
Conference Paper
2016Advanced building blocks for (sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Massler, H.; Moschetti, G.; Rösch, M.; Weber, R.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Rosenzweig, J.; Ambacher, O.
Conference Paper
2016Analysis and modeling of GaN-based multi field plate Schottky power diodes
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices
Reusch, M.; Holc, K.; Pletschen, W.; Kirste, L.; Zukauskaité, A.; Yoshikawa, T.; Iankov, D.; Ambacher, O.; Lebedev, V.
Journal Article
2016A broadband 175-245 GHz balanced medium power amplifier using 50-nm mHEMT technology
Amado-Rey, A.B.; Campos-Roca, Y.; Friesicke, C.; Tessmann, A.; Massler, H.; Wagner, S.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2016Charakterisierung und Modellierung von metamorphen HEMT Strukturen im Millimeter- und Submillimeter-Wellenlängenbereich
Ohlrogge, Matthias
: Ambacher, Oliver
Dissertation
2016Charakterisierung und Modellierung von metamorphen HEMT Strukturen im Millimeter- und Submillimeter-Wellenlängenbereich
Ohlrogge, M.
: Ambacher, O. (Referent); Bolognesi, C.R. (Referent)
Dissertation
2016Compact W-band receiver module on hybrid liquid crystal polymer board
Rösch, M.; Tessmann, A.; Leuther, A.; Kuri, M.; Wagner, S.; Ambacher, O.
Conference Paper
2016Compact W-band receiver module on hybrid liquid crystal polymer board
Rösch, M.; Tessmann, A.; Leuther, A.; Kuri, M.; Wagner, S.; Ambacher, O.; Gulan, H.
Conference Paper
2016Complex interaction of passive multiport structures and their description by separate discrete models
Ohlrogge, M.; Tessmann, A.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Journal Article
2016Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures
Raay, F. van; Quay, R.; Schwantuschke, D.; Ohlrogge, M.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Dynamic detection of target DNA with AlGaN/GaN high electron mobility transistors
Espinosa, N.
: Ambacher, O. (Referent)
Dissertation
2016Electrostatic self-assembly of diamond nanoparticles onto Al- and N-Polar sputtered aluminum nitride surfaces
Yoshikawa, Taro; Reusch, Markus; Zürbig, Verena; Cimalla, Volker; Lee, K.-H.; Kurzyp, M.; Arnault, J.-C.; Nebel, Christoph E.; Ambacher, Oliver; Lebedev, Vadim
Journal Article
2016Enhanced actuation of nanocrystalline diamond microelectromechanical disk resonators with AlN layers
Yoshikawa, T.; Reusch, M.; Holc, K.; Iankov, D.; Zürbig, V.; Zukauskaité, A.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Journal Article
2016Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Conference Paper
2016Epitaxie und Charakterisierung von UV-Photodetektoren auf der Basis des AlGaN-Schichtsystems
Albrecht, B.
: Ambacher, O. (Referent)
Dissertation
2016Evaluation, design and realisation of a Riemann Pump for the frequency range of 0..6 GHz for 5G mobile communication
Weiß, M.
: Ambacher, O. (Referent); Quay, R. (Referent)
Master Thesis
2016A GaN-based 10.1MHz class-F-1 300 W continuous wave amplifier targeting industrial power applications
Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2016GaN-based E-band power amplifier modules
Schwantuschke, D.; Henneberger, R.; Wagner, S.; Tessmann, A.; Kallfass, I.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Growth and characterization of intrinsic and boron doped single crystal diamond
Trost, T.
: Ambacher, O. (Referent); Zürbig, V. (Betreuer)
Master Thesis
2016High voltage GaN-based Schottky diodes in non-isolated LED buck converters
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
Conference Paper
2016High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
Ture, E.; Brückner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.
Journal Article
2016InGaAs-Avalanche-Photodioden für bildgebende Verfahren im kurzwelligen Infrarot
Kleinow, P.
: Ambacher, O. (Referent); Koos, C. (Referent)
Dissertation
2016Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and water
Himmerlich, M.; Eisenhardt, A.; Berthold, T.; Wang, C.Y.; Cimalla, V.; Ambacher, O.; Krischok, S.
Journal Article
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Conference Paper
2016An investigation of millimeter wave switches based on shunt transistors including SPDT switch MMICs up to 300 GHz
Thome, F.; Ohlrogge, M.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Investigation of system parameters for increasing the imaging speed and image quality of a MIMO millimeter wave camera
George, R.
: Ambacher, O. (Referent); Quay, R. (Referent); Rösch, M. (Betreuer); Bleh, D. (Betreuer)
Master Thesis
2016Kontaktlose Mikroschalter auf der Basis von Dünnschichten aus Aluminiumnitrid und nanokristallinem Diamant
Lang, Nicola
: Ambacher, Oliver
Dissertation
2016LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers
Zibold, A.; Kunzer, M.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Wagner, J.; Ambacher, O.
Conference Paper
2016Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.
Conference Paper
2016Low noise amplifiers for MetOp-SG
Rösch, M.; Tessmann, A.; Leuther, A.; Weber, R.; Moschetti, G.; Aja, B.; Kotiranta, M.; Massler, H.; Kangas, V.; Perichaud, M.-G.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Material characterization using a compact W-Band ellipsometer
Klenner, M.; Zech, C.; Hülsmann, A.; Kühn, J.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Measurement setup for the analysis of broadband frequency-modulated signals
Zech, C.; Baumann, B.; Hülsmann, A.; Kühn, J.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier
Mußer, M.
: Ambacher, O. (Referent); Manoli, Y. (Betreuer)
Dissertation
2016A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality
Tessmann, A.; Leuther, A.; Massler, H.; Wagner, S.; Thome, F.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Schwantuschke, Dirk
: Kallfass, I. (Betreuer); Ambacher, Oliver (Hrsg.)
Dissertation
2016Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2016Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Conference Paper
2016Optimierung der Mikrostruktur und der Messparameter eines photostimulierten Ozonsensors auf der Basis von Indiumoxid
Mischo, M.
: Ambacher, O. (Referent); Cimalla, V. (Betreuer)
Dissertation
2016Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-Band
Friesicke, C.; Maier, T.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Performance of tri-gate AlGaN/GaN HEMTs
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Conference Paper
2016Piezo-force and vibration analysis of ZnO nanowire arrays for sensor application
Christian, B.; Volk, J.; Lukács, I.E.; Sautieffc, E.; Sturm, C.; Graillot, A.; Dauksevicius, R.; O'Reilly, E.; Ambacher, O.; Lebedev, V.
Journal Article, Conference Paper
2016Piezoelectric AlN films for FPW sensors with improved device performance
Reusch, M.; Holc, K.; Kirste, L.; Katus, P.; Reindl, L.; Ambacher, O.; Lebedev, V.
Journal Article, Conference Paper
2016Piezoelectric AlN films for FPW sensors with improved device performance
Reusch, M.; Holc, K.; Kirste, L.; Katus, P.; Reindl, L.; Ambacher, O.; Lebedev, V.
Journal Article, Conference Paper
2016Pinhole-free ultra-thin nanocrystalline diamond film growth via electrostatic self-assembly seeding with increased salt concentration of nanodiamond colloids
Yoshikawa, T.; Gao, F.; Zürbig, V.; Giese, C.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Journal Article, Conference Paper
2016Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
Jauss, S.A.; Schwaiger, S.; Daves, W.; Ambacher, O.
Conference Paper
2016A portable W-band radar system for enhancement of infrared vision in fire fighting operations
Klenner, Mathias; Zech, Christian; Hülsmann, Axel; Kühn, Jutta; Schlechtweg, Michael; Hahmann, Konstantin; Kleiner, Bernhard; Ulrich, Michael; Ambacher, Oliver
Conference Paper
2016Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.
Journal Article, Conference Paper
2016Prospects and limitations of stacked-FET approaches for enhanced output power in voltage-controlled oscillators
Thome, F.; Maroldt, S.; Ambacher, O.
Journal Article
2016Quasi-Bessel beams from asymmetric and astigmatic illumination sources
Müller, A.; Wapler, M.C.; Schwarz, U.T.; Reisacher, M.; Holc, K.; Ambacher, O.; Wallrabe, U.
Journal Article
2016RF performance of trigate GaN HEMTs
Alsharef, M.; Christiansen, M.; Granzner, R.; Ture, E.; Quay, R.; Ambacher, O.; Schwierz, F.
Journal Article
2016The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films
Rombach, J.; Papadogianni, A.; Mischo, M.; Cimalla, V.; Kirste, L.; Ambacher, O.; Berthold, T.; Krischok, S.; Himmerlich, M.; Selve, S.; Bierwagen, O.
Journal Article
2016Security Research Conference. 11th Future Security
: Ambacher, Oliver (Ed.); Wagner, Joachim (Ed.); Quay, Rüdiger (Ed.)
Conference Proceedings
2016Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2016Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.
Conference Paper
2016Small signal modelling approach for submillimeter wave III-V HEMTs with analysation and optimization possibilities
Ohlrogge, M.; Tessmann, A.; Leuther, A.; Weber, R.; Massler, H.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D.
Conference Paper
2016Spectroscopic measurement of material properties using an improved millimeter-wave ellipsometer based on metallic substrates
Klenner, M.; Zech, C.; Hülsmann, A.; Kühn, J.; Schlechtweg, M.; Ambacher, O.
Journal Article
2016Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
Moschetti, G.; Thome, F.; Ohlrogge, M.; Goliasch, J.; Schäfer, F.; Aja, B.; Leuther, A.; Schlechtweg, M.; Seelmann-Eggebert, M.; Ambacher, O.; Wieching, G.; Kotiranta, M.
Journal Article
2016Towards surface-enlarged diamond materials
Gao, F.
: Ambacher, O. (Referent); Garrido, J.A. (Referent)
Dissertation
2016Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2016Vergleichende thermische Untersuchungen von Leistungsbauelementen
Grießer, Jan
: Ambacher, O. (Referent); Quay, R. (Referent); Reiner, R. (Betreuer)
Bachelor Thesis
2016A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance
Thome, F.; Ambacher, O.
Conference Paper
2015A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure
Moschetti, G.; Leuther, A.; Massler, H.; Aja, B.; Rösch, M.; Schlechtweg, M.; Ambacher, O.; Kangas, V.; Geneviève-Perichaud, M.
Journal Article
2015A 200 GHz driver amplifier in metamorphic HEMT technology
Amado-Rey, A.B.; Campos-Roca, Y.; Maroldt, S.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015Admittance-voltage profiling of Al(x)Ga(1-x)N/GaN heterostructures: Frequency dependence of capacitance and conductance
Köhler, K.; Pletschen, W.; Godejohann, B.-J.; Müller, S.; Menner, H.; Ambacher, O.
Journal Article
2015Aluminium nitride membranes with embedded buried IDT electrodes for novel flexural plate wave devices
Reusch, M.; Katus, P.; Holc, K.; Pletschen, W.; Kirste, L.; Zürbig, V.; Iankov, D.; Reindl, L.; Ambacher, O.; Lebedev, V.
Conference Paper
2015Aluminiumnitrid membranen mit vergrabenen IDT für neuartige membranbiegeschwinger
Reusch, M.; Katus, P.; Schilling, C.; Holc, K.; Pletschen, W.; Kirste, L.; Ambacher, O.; Reindl, L.; Lebedev, V.
Conference Paper
2015Analysis of the potential of gallium nitride based monolithic power amplifiers in the microwave domain with more than an octave bandwidth
Dennler, P.
: Ambacher, O. (Referent); Schumacher, H. (Referent)
Dissertation
2015Appropriate salt concentration of nanodiamond colloids for electrostatic self-assembly seeding of monosized individual diamond nanoparticles on silicon dioxide surfaces
Yoshikawa, T.; Zürbig, V.; Gao, F.; Hoffmann, R.; Nebel, C.E.; Ambacher, O.; Lebedev, V.
Journal Article
2015Bias-free lateral terahertz emitters - a simulation study
Granzner, R.; Polyakov, V.M.; Cimalla, V.; Ambacher, O.; Schwierz, F.
Journal Article
2015Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit
Raay, F. van; Quay, R.; Aja, B.; Moschetti, G.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015Broadband Transceiver Circuits for Millimeter-Wave Wireless Communication
Lopez-Diaz, Daniel
: Ambacher, Oliver (Ed.); Kallfass, I. (Betreuer)
Dissertation
2015Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
Pletschen, W.; Linkohr, S.; Kirste, L.; Cimalla, V.; Müller, S.; Himmerlich, M.; Krischok, S.; Ambacher, O.
Conference Paper
2015Characterization of quasi-optical focusing systems at w-band frequencies
Klenner, M.; Zech, C.; Hülsmann, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
Hahn, H.; Reuters, B.; Geipel, S.; Schauerte, M.; Benkhelifa, F.; Ambacher, O.; Kalisch, H.; Vescan, A.
Journal Article
2015Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
Jauss, S.A.; Schwaiger, S.; Daves, W.; Noll, S.; Ambacher, O.
Conference Paper
2015A compact W-band LFMCW radar module with high accuracy and integrated signal processing
Zech, C.; Hülsmann, A.; Schlechtweg, M.; Reinold, Steffen; Giers, Christof; Kleiner, Bernhard; Georgi, L.; Kahle, R.; Becker, K.-F.; Ambacher, O.
Conference Paper
2015Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors
Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Ambacher, O.
Journal Article
2015A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.
Conference Paper
2015Dynamic detection of target-DNA with AlGaN/GaN high electron mobility transistors
Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Podolska, A.; Ambacher, O.
Journal Article, Conference Paper
2015Electrochemical generation of hydrogenated graphene flakes
Zhao, M.; Guo, X.-Y.; Ambacher, O.; Nebel, C.E.; Hoffmann, R.
Journal Article
2015High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O.
Journal Article
2015High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Conference Paper
2015High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Conference Paper
2015High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2015Impact of metallization layer structure on the performance of G-band branch-line couplers
Amado-Rey, A.B.; Campos-Roca, Y.; Weber, R.; Maroldt, S.; Tessmann, A.; Massler, H.; Wagner, S.; Leuther, A.; Ambacher, O.
Journal Article
2015Impedance characterization of DNA-functionalization layers on AlGaN/GaN high electron mobility transistors
Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Podolska, A.; Ambacher, O.
Conference Paper, Journal Article
2015Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2015Investigation of dielectric properties of multilayer structures consisting of homogeneous plastics and liquid solutions at 75-110 GHz
Klenner, Mathias; Abels, T.; Zech, Christian; Hülsmann, Axel; Schlechtweg, Michael; Ambacher, O.
Journal Article
2015Kontaktlose Mikroschalter auf der Basis von Dünnschichten aus Aluminiumnitrid und nanokristallinem Diamant
Lang, N.
: Ambacher, O. (Referent); Fiederle, M. (Referent)
Dissertation
2015Large area InN terahertz emitters based on the lateral photo-Dember effect
Wallauer, J.; Grumber, C.; Polyakov, V.; Iannucci, R.; Cimalla, V.; Ambacher, O.; Walther, M.
Journal Article
2015Micro-system: Gallium nitride RF-broad-band high-power amplifier
Mußer, M.
: Ambacher, O. (Referent); Manoli, Y. (Betreuer)
Dissertation
2015Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Schwantuschke, D.
: Kallfass, I. (Referent); Ambacher, O. (Referent)
Dissertation
2015Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2015Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
2015Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications
Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.
Conference Paper
2015New assembly and packaging technologies for high-power and high-temperature GaN and SiC devices
Bajwa, A.A.
: Wilde, J. (Referent); Ambacher, O. (Referent)
Dissertation
2015Normally-off AlGaN/GaN/AlGaN double heterostructure FETs with a thick undoped GaN gate layer
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Ambacher, O.
Journal Article
2015A novel broadband high-power source-pull/load-pull concept for the HF- to UHF-range
Maier, F.; Grede, A.; Gruner, D.; Quay, R.; Waltereit, P.; Ambacher, O.
Conference Paper
2015A novel broadband high-power source-pull/load-pull concept for the HF-to UHF-range
Maier, F.A.; Grede, A.; Gruner, D.; Quay, R.; Waltereit, P.; Ambacher, O.
Conference Paper
2015Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
Thome, F.; Maroldt, S.; Ambacher, O.
Conference Paper
2015On the accurate measurement and calibration of s-parameters for millimeter wavelengths and beyond
Seelmann-Eggebert, M.; Ohlrogge, M.; Weber, R.; Peschel, D.; Massler, H.; Riessle, M.; Tessmann, A.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Journal Article
2015On the determination of noise parameters of low-noise transistor devices
Seelmann-Eggebert, M.; Aja, B.; Baldischweiler, B.; Moschetti, G.; Massler, H.; Bruch, D.; Schlechtweg, M.; Ambacher, O.
Journal Article
2015Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Conference Paper
2015Photoelectron emission from diamond into buffer solutions
Ding, A.
: Ambacher, O. (Referent); Nebel, C.E. (Referent)
Master Thesis
2015Piezoelektrisch aktuierte AlN/SiN-Mikrolinsen
Fries, J.
: Ambacher, O. (Referent); Lebedev, V. (Referent); Zürbig, V. (Betreuer)
Master Thesis
2015Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Conference Paper
2015Radar system components to detect small and fast objects
Hülsmann, A.; Zech, C.; Klenner, M.; Tessmann, A.; Leuther, A.; Lopez-Diaz, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015Reliability studies of GaN high electron mobility transistors
Cäsar, Markus
: Ambacher, Oliver
Dissertation
2015Switching frequency modulation for GaN-based power converters
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2015Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V
Hahn, H.; Benkhelifa, Fouad; Ambacher, O.; Brunner, F.; Noculak, A.; Kalisch, H.; Vescan, A.
Journal Article
2015Tunable multisegment Si(x)N(y)/AlN piezo lenses for wavefront correction
Zürbig, V.; Pätz, D.; Fries, J.; Bichra, M.; Pletschen, W.; Holc, K.; Reusch, M.; Nebel, C.E.; Sinzinger, S.; Ambacher, O.; Lebedev, V.
Conference Paper
2015Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.
Conference Paper
2015With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.
Conference Paper
201420 nm metamorphic HEMT technology for terahertz monolithic integrated circuits
Leuther, A.; Tessmann, A.; Doria, P.; Ohlrogge, M.; Seelmann-Eggebert, M.; Massler, H.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology
Tessmann, A.; Hurm, V.; Leuther, A.; Massler, H.; Weber, R.; Kuri, M.; Riessle, M.; Stulz, H.-P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T.
Journal Article, Conference Paper
2014A 600 GHz low-noise amplifier module
Tessmann, A.; Leuther, A.; Massler, H.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Stulz, H.P.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Raay, F. van; Ambacher, O.
Conference Paper
2014Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies
Maier. T.; Carrubba, V.; Quay, R.; Raay, F. van; Ambacher, O.
Conference Paper
2014Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies
Quay, R.; Schwantuschke, D.; Brueckner, P.; Chéron, J.; Dammann, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Analysis and performance of drain bias "in-dependent" class-J power amplifier
Carrubba, V.; Ture, E.; Quay, R.; Raay, F. van; Musser, M.; Ambacher, O.
Conference Paper
2014Analysis of dielectric properties of layered plastics at W-band frequencies
Klenner, M.; Zech, C.; Hülsmann, A.; Schlechtweg, M.; Wagner, J.; Ambacher, O.
Conference Paper
2014Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Backside process free broadband amplifier MMICs at D-band and H-band in 20 nm mHEMT technology
Merkle, T.; Leuther, A.; Koch, S.; Kallfass, I.; Tessmann, A.; Wagner, S.; Massler, H.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Conference Paper
2014Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
Conference Paper
2014A broadband 220-320 GHz medium power amplifier module
Tessmann, A.; Leuther, A.; Hurm, V.; Massler, H.; Wagner, S.; Kuri, M.; Zink, M.; Riessle, M.; Stulz, H.-P.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning
Ambacher, O.; Ostendorf, R.; Bleh, D.; Merten, A.; Grahmann, J.; Schmidt, R.; Kunzer, M.; Hugger, S.; Wagner, J.
Conference Paper
2014A compact in-situ cryogenic noise measurement system for characterization of low noise ampliers
Bruch, D.
: Ambacher, O. (Ed.)
Dissertation
2014Compact quasi-optical focusing system for a 94 GHz FMCW radar
Klenner, M.; Zech, C.; Hülsmann, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Cryogenic low noise amplifier development for 67-116 GHz
Kotiranta, M.; Bruch, D.; Leuther, A.; Massler, H.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.; Türk, S.; Goliasch, J.; Schäfer, F.
Conference Paper
2014Elastic properties of ultrathin diamond/AlN membranes
Zürbig, V.; Hees, J.; Pletschen, W.; Sah, R.E.; Wolfer, M.; Kirste, L.; Heidrich, N.; Nebel, C.; Ambacher, O.; Lebedev, V.
Journal Article
2014Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications
Baeumler, M.; Polyakov, V.M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Journal Article
2014European Materials Research Society Spring Meeting, E-MRS 2013
: André, P. (Guest Ed.); Reece, P. (Guest Ed.); Tomm, J.W. (Guest Ed.); Ribierre, J.-C. (Guest Ed.); Moreels, I. (Guest Ed.); Christen, J. (Guest Ed.); Gil, B. (Guest Ed.); Méndez, B. (Guest Ed.); Lorenz, K. (Guest Ed.); Fraboni, B. (Guest Ed.); Ambacher, O. (Guest Ed.)
Conference Proceedings
2014Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Conference Paper
2014Excitons and exciton-phonon coupling in the optical response of GaN
Shokhovets, S.; Bärwolf, F.; Gobsch, G.; Runge, K.; Köhler, K.; Ambacher, O.
Conference Paper, Journal Article
2014Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications
Aidam, R.; Diwo, E.; Godejohann, B.-J.; Kirste, L.; Quay, R.; Ambacher, O.
Journal Article
2014High linearity active GaN-HEMT down-converter MMIC for E-band radar applications
Kallfass, I.; Eren, G.; Weber, R.; Wagner, S.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Conference Paper
2014Improved AlGaN p-i-n photodetectors for monitoring of ultraviolet radiation
Albrecht, B.; Kopta, S.; John, O.; Rütters, Martin; Kunzer, M.; Driad, R.; Marenco, N.; Köhler, K.; Walther, M.; Ambacher, O.
Journal Article
2014InAs/GaSb-Infrarotdetektoren mit reduziertem Dunkelstrom
Masur, Jan-Michael
: Ambacher, Oliver
Dissertation
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Conference Paper
2014Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U.T.
Conference Paper
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal Article
2014Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s
Thome, F.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
2014Nano-diamond based spheres for radio frequency electromechanical resonators
Lebedev, V.; Iankov, D.; Heidrich, N.; Zürbig, V.; Wild, C.; Cimalla, V.; Ambacher, O.
Journal Article
2014A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
Waltereit, P.; Leuther, A.; Rüster, J.; Czap, H.; Preschle, M.; Iannucci, R.; Müller, S.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Novel layout and packaging for lateral, low-resistance GaN-on-Si power transistors
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Walcher, H.; Quay, R.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Optische Polarisationsabhängigkeit semipolarer und nonpolarer InGaN-Quantenfilme und ihre Ladungsträgerstatistik
Schade, Lukas
: Ambacher, Oliver (Ed.)
Dissertation
2014Parameterextraktion an InAs/GaSb-Übergitterdetektoren für das langwellige Infrarot
Lemke, F.
: Ambacher, O. (Gutachter); Cimalla, V. (Gutachter); Rehm, R. (Betreuer)
Master Thesis
2014Planar zero bias Schottky diodes on an InGaAs metamorphic HEMT MMIC process
Thome, F.; Leuther, A.; Maroldt, S.; Schlechtweg, M.; Ambacher, O.
Journal Article
2014Processing of nanoscale gaps for boron-doped nanocrystalline diamond based MEMS
Iankov, D.; Zürbig, V.; Pletschen, W.; Giese, C.; Iannucci, R.; Ambacher, O.; Lebedev, V.
Journal Article, Conference Paper
2014Q- and E-band amplifier MMICs for satellite communication
Schwantuschke, D.; Aja, B.; Seelmann-Eggebert, M.; Quay, R.; Leuther, A.; Brueckner, P.; Schlechtweg, M.; Mikulla, M.; Kallfass, I.; Ambacher, O.
Conference Paper
2014Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A.
Journal Article
2014Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2014Reliability studies of GaN high electron mobility transistors
Cäsar, M.
: Ambacher, O. (Betreuer); Schwierz, F. (Betreuer)
Dissertation
2014A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications
Ohlrogge, M.; Seelmann-Eggebert, M.; Leuther, A.; Massler, H.; Tessmann, A.; Weber, R.; Schwantuschke, D.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors
Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Ambacher, O.
Journal Article, Conference Paper
2014Source/load pull investigation of AlGaN/GaN power transistors with ultra-high efficiency
Carrubba, V.; Quay, R.; Maroldt, S.; Musser, M.; Raay, F. van; Ambacher, O.
Conference Paper
2014Verbesserung der Abbildungsqualität blauer Projektionslichtquellen
Kopp, Fabian
: Ambacher, Oliver
Dissertation
2014Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2014Wireless communications on THz carriers takes shape
Freude, W.; König, S.; Lopez-Diaz, D.; Antes, J.; Boes, F.; Henneberger, R.; Leuther, A.; Tessmann, A.; Schmogrow, R.; Hillerkuss, D.; Palmer, R.; Zwick, T.; Koos, C.; Ambacher, O.; Leuthold, J.; Kallfass, I.
Conference Paper
2014Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology
Koenig, S.; Lopez-Diaz, D.; Antes, J.; Boes, F.; Henneberger, R.; Leuther, A.; Tessmann, A.; Schmogrow, R.; Hillerkuss, D.; Palmer, R.; Zwick, T.; Koos, C.; Freude, W.; Ambacher, O.; Leuthold, J.; Kallfass, I.
Conference Paper
2013(In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.
Journal Article
2013100 Gbit/s wireless link with mm-wave photonics
König, S.; Boes, F.; Lopez-Diaz, D.; Antes, J.; Henneberger, R.; Schmogrow, R.; Hillerkuss, D.; Palmer, R.; Zwick, T.; Koos, C.; Freude, W.; Ambacher, O.; Kallfass, I.; Leuthold, J.
Conference Paper
2013A 240 GHz quadrature receiver and transmitter for data transmission up to 40 Gbit/s
Lopez-Diaz, D.; Tessmann, A.; Leuther, A.; Wagner, S.; Schlechtweg, M.; Ambacher, O.; König, S.; Antes, J.; Boes, F.; Kurz, F.; Henneberger, R.
Conference Paper
2013A 240 GHz quadrature receiver and transmitter for data transmission up to 40 Gbit/s
Lopez-Diaz, D.; Tessmann, A.; Leuther, A.; Wagner, S.; Schlechtweg, M.; Ambacher, O.; Koenig, S.; Antes, J.; Boes, F.; Kurz, F.; Henneberger, R.; Kallfass, I.
Conference Paper
2013A 243 GHz LNA module based on mHEMT MMICs with integrated waveguide transitions
Hurm, V.; Weber, R.; Tessmann, A.; Massler, H.; Leuther, A.; Kuri, M.; Riessle, M.; Stulz, H.P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T.
Journal Article
2013A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers
Tessmann, A.; Hurm, V.; Leuther, A.; Massler, H.; Weber, R.; Kuri, M.; Riessle, M.; Stulz, H.P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T.
Conference Paper
201335 nm mHEMT technology for THz and ultra low noise applications
Leuther, A.; Tessmann, A.; Dammann, M.; Massler, H.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2013A 67 GHz GaN voltage-controlled oscillator MMIC with high output power
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Journal Article
2013AlGaN ultraviolet A and ultraviolet C photodetectors with very high specific detectivity D*
Albrecht, B.; Kopta, S.; John, O.; Kirste, L.; Driad, R.; Köhler, K.; Walther, M.; Ambacher, O.
Journal Article
2013All-diamond nanoelectrode arrays
Hees, Jan Jakob
: Ambacher, Oliver
Dissertation
2013Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Conference Paper
2013Biofunktionalisierung und -sensorik mit AlGaN/GaN-Feldeffekttransistoren
Schwarz, S.U.
: Ambacher, O. (Ed.)
Dissertation
2013Broadband absorption and emission millimeter-wave spectroscopy between 220 and 325 GHz
Szymkiewicz, M.; Hülsmann, A.; Tessmann, A.; Schlechtweg, M.; Leuther, A.; Ambacher, O.; Koch, S.; Riedel, M.; Kallfass, I.
Conference Paper
2013Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature
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